2024-03-28T22:54:20Z
https://u-ryukyu.repo.nii.ac.jp/oai
oai:u-ryukyu.repo.nii.ac.jp:02004881
2022-10-31T02:24:58Z
1642837622505:1642837855274:1642837860078
1642838403551:1642838406845
Si-doped GaAs単結晶の転位の上昇と二次元欠陥 -エッチング法による観測-
Observation of Dislocation Climbing with Two-dimensional Defects in Si-doped GaAs Crystal by Etching Technique
前濱, 剛廣
Maehama, Takehiro
open access
Defect
Dislocation
Etch figure
Gallium arrsenide
Si-doped and non-doped GaAs crystals are heat-treated for 72 hours at 1000℃ under 600 Torr arrsenic pressure. Arrow-shaped etch figures, which have never been found on as-grown Si-doped GaAs crystals, are formed on As (1^^-1^^-1^^-) surface of heat-treated Si-doped GaAs crystal, but these etch figures did not appear on non-doped case. The arrow-shaped etch figure corresponds to a two-dimensional defect which is formed by dislocation clibming. The dislocation clibming mechanism and the formation mechanism of the two-dimensional defect are discussed precisely and a model of the formation is proposed. which concerns with Si-impurities and As interstitials.
紀要論文
琉球大学工学部
1984-10
jpn
departmental bulletin paper
VoR
http://hdl.handle.net/20.500.12000/12489
http://hdl.handle.net/20.500.12000/12489
https://u-ryukyu.repo.nii.ac.jp/records/2004881
0389-102X
AN0025048X
琉球大学工学部紀要
28
47
53
https://u-ryukyu.repo.nii.ac.jp/record/2004881/files/No28p047.pdf