2024-03-29T08:28:34Z
https://u-ryukyu.repo.nii.ac.jp/oai
oai:u-ryukyu.repo.nii.ac.jp:02011252
2023-08-03T05:43:17Z
1642838163960:1642838338003
1642838403551:1642838406845
Appearance of the p-channel performance of poly-Si TFTs with a metal S/D electrode using BLDA aiming for low-cost CMOS
Ashitomi, Takuya
Harada, Taisei
Okada, Tatsuya
Noguchia, Takashi
Nishikatab, Osamu
Ota, Atsushi
open access
Creative Commons Attribution 4.0
http://creativecommons.org/licenses/by/4.0/
Poly Si
TFT
blue laser diodes annealing
p-channel
metal source and drain
Proposed in this study and fabricated on a glass substrate without adopting impurity doping were p-channel polycrystalline silicon (Si) thin-film transistors (TFTs) with a metal source/drain (S/D) electrode. The amorphous 50-nm-thick Si films deposited on a glass substrate via plasma-enhanced chemical vapor deposition were polycrystallized using blue laser diode annealing. Gold (Au), a highwork-function metal, was evaporated for the S/D electrode directly onto the Si channel layer. As a result of the TFT formation, the typical I_d–V_g characteristics of the p-channel TFT were successfully obtained. In addition, after hydrogenation at 200°C, the drain current drastically increased. The 14 cm^2/Vs effective field effect hole mobility was deduced at the drain voltage of −1 V.
論文
Taylor & Francis
2017
eng
journal article
VoR
http://hdl.handle.net/20.500.12000/47325
http://hdl.handle.net/20.500.12000/47325
https://u-ryukyu.repo.nii.ac.jp/records/2011252
https://doi.org/10.1080/15980316.2017.1381650
https://doi.org/10.1080/15980316.2017.1381650
1598-0316
2158-1606
Journal of Information Display
18
4
185
189
https://u-ryukyu.repo.nii.ac.jp/record/2011252/files/Appearance of the p channel performance of poly Si TFTs with a metal S D electrode using BLDA aiming for low cost CMOS.pdf