2024-03-28T16:25:41Z
https://u-ryukyu.repo.nii.ac.jp/oai
oai:u-ryukyu.repo.nii.ac.jp:02011260
2023-08-03T05:27:14Z
1642838163960:1642838338003
1642838403551:1642838406845
High mobility sputtered InSb film by blue laser diode annealing
Koswaththage, C.J.
Higashizako, T.
Okada, T.
Sadoh, T.
Furuta, M.
Bae, B.S.
Noguchi, T.
open access
Creative commons Attribution 4.0
http://creativecommons.org/licenses/by/4.0/
InSb thin film was deposited on glass by r.f. sputtering using the InSb (atomic ratio of 1:1) target. The film was capped by SiO_2 film to prevent the effusion of Sb of low melting point. After that, blue laser beam at 445 nm of controlled power density was irradiated using CW scanning mode. The film was crystalized successfully with keeping the ratio of In and Sb as (1:1). High electron Hall mobility of 1,050 cm^2 /(Vs) was obtained without degrading under glass. New device applications such as magnetic or infrared sensor system with poly Si TFTs are expected not only on glass but also on flexible panel such as on plastic sheet.
論文
American Institute of Physics
2019-04-10
eng
journal article
VoR
http://hdl.handle.net/20.500.12000/47346
http://hdl.handle.net/20.500.12000/47346
https://u-ryukyu.repo.nii.ac.jp/records/2011260
https://doi.org/10.1063/1.5087235
https://doi.org/10.1063/1.5087235
2158-3226
AIP Advances
9
4
045009-1
045009-5
https://u-ryukyu.repo.nii.ac.jp/record/2011260/files/1.5087235.pdf