2024-03-28T12:40:33Z
https://u-ryukyu.repo.nii.ac.jp/oai
oai:u-ryukyu.repo.nii.ac.jp:02004872
2022-10-31T02:24:45Z
1642837622505:1642837855274:1642837869466
1642838403551:1642838406845
X線二結晶法によるストライプ状SiO_2/GaAs基板の格子歪の測定
Measurement of Lattice Strain of Striped Si0_2/GaAs Substrate by X-ray Double Crystal Method
前濱, 剛廣
新里, 樹
安冨祖, 忠信
Maehama, Takehiro
Shinzato, Itsuki
Afuso, Chusin
X-ray double crystal method
Gallium arsenide
Silicon dioxide film
Lattice strain
A measurement method for relative lattice strain of striped Si0_2/GaAs and the results of the measurements are presented. As the fundamental of the method the peak - splitting angle of the rocking curve of X - ray double crystal method due to the relative lattice strain is used. The method is applied to some samples with different stripe widths. The results of the measurements reveal the following facts. The relative lattice strain varies inversely as the stripe width. The equation of the relationship is given by assuming the exponential distribution of the lattice strain. The relative lattice strain is divided into two terms by elastic theory. One is the spacing strain of the parallel atomic planes and the other is the tilting strain of the planes.
紀要論文
http://purl.org/coar/resource_type/c_6501
琉球大学工学部
1994-03
VoR
http://hdl.handle.net/20.500.12000/12408
0389-102X
AN0025048X
琉球大学工学部紀要
47
87
77
jpn
open access