2024-03-28T15:53:33Z
https://u-ryukyu.repo.nii.ac.jp/oai
oai:u-ryukyu.repo.nii.ac.jp:02004879
2022-10-31T02:24:55Z
1642837622505:1642837855274:1642837862356
1642838403551:1642838406845
気相エピタキシャル成長GaAsの表面模様と結晶欠陥との対応
Correlation between Surface Morphology and Crystal Defects of Epitaxial Layer of GaAs Grown from Vapour Phase
前濱, 剛廣
中西, 英俊
安冨祖, 忠信
Maehama, Takehiro
Nakanishi, Hidetoshi
Afuso, Chushin
Morphology
Epitaxial layer
Lattice defect
Gallium arsenide
Some observations were made to study formation mechanism of small grooves directed on [011] on a surface of GaAs epitaxial layer, which was grown on (100) surface of Cr-doped GaAs from the vapour phase. It was tried to observe some lattice defects which may cause formation of these grooves, by etching technique, X-ray topography and transmission electron microscope. However, any lattice defects which correspond to the grooves were not found by these three methods. Therefore it was concluded that the grooves were not formed owing to lattice defects which disturbed lateral growth of the crystal. It is assumed that the grooves could be formed by gaseous etching which may take place at the end of crystal growth process.
紀要論文
http://purl.org/coar/resource_type/c_6501
琉球大学工学部
1987-03
VoR
http://hdl.handle.net/20.500.12000/12467
0389-102X
AN0025048X
琉球大学工学部紀要
33
44
39
jpn
open access