2024-03-28T09:17:29Z
https://u-ryukyu.repo.nii.ac.jp/oai
oai:u-ryukyu.repo.nii.ac.jp:02004882
2022-10-31T02:24:59Z
1642837622505:1642837855274:1642837858306
1642838403551:1642838406845
転位線のエッチング速度
Etching Rate along Dislocations
前浜, 剛廣
Maehama, Takehiro
前濱, 剛廣
Etching rate
Dislocation
Galliumarsenide
A measurement method is proposed for etching rate along a dislocation. The method is applied to dislocation lines and partial dislocation loops in {111}n-GaAs wafers with RC-1 etchant. The results show that the etching rate of the dislocation perpendicular to the etched surface is about 1.5 times as large as the surface etching rate. The results show also that the activation energy of etching dislocation is smaller than the activation energy of the surface. A formula is proposed which correlates the etching rate of the dislocation to the angle between the dislocation and the surface. From the formula the critical angle under which the dislocation etch pits are not formed is estimated.
紀要論文
http://purl.org/coar/resource_type/c_6501
琉球大学工学部
1982-09
VoR
http://hdl.handle.net/20.500.12000/12490
0389-102X
AN0025048X
琉球大学工学部紀要
24
92
85
jpn
open access