2024-03-28T19:23:17Z
https://u-ryukyu.repo.nii.ac.jp/oai
oai:u-ryukyu.repo.nii.ac.jp:02011255
2023-08-03T05:29:24Z
1642838163960:1642838338003
1642838403551:1642838406845
Low-temperature poly Si TFTs via BLDA for a Ne-sputtered Si film using sputtered gate SiO2
Noguchi, Takashi
Okada, Tatsuya
TFT
poly Si
sputtering
gate oxide
Amorphous SiO_2 and amorphous Si films were deposited on glass using radio frequency (RF) sputtering, and were subsequently poly-crystallized using blue-laser diode annealing (BLDA) scanned by a CW beam. Ne, which has a smaller atomic radius than Ar, was used for the sputtering of the Si film. For the gate insulator, a small amount of O_2 gas diluted with Ar was flown during the sputtering to optimize the SiO_2 film with a low leakage current. A simple TFT structure with a metal source and drain (S/D) was adopted to realize a low-temperature process with a low fabrication cost. Furthermore, to confirm the effectiveness of the sputtered gate oxide, a poly-Si TFT adopting a Si film deposited using plasma-enhanced chemical vapor deposition (PE CVD) for the channel was fabricated and was compared with the TFT with a sputtered Si film for the channel. Reasonable V_g-I_d characteristics were obtainedfor both poly-Si TFTs. The TFT structure with a metal S/Dformed through a low-temperature sputtering-based process is expected to be applied to Si TFTs on an arbitrary flexible panel.
論文
http://purl.org/coar/resource_type/c_6501
Taylor & Francis
2018
VoR
http://hdl.handle.net/20.500.12000/47328
1598-0316
2158-1606
Journal of Information Display
4
19
164
159
eng
https://doi.org/10.1080/15980316.2018.1506367
https://doi.org/10.1080/15980316.2018.1506367
open access
Creative Commons Attribution 4.0
http://creativecommons.org/licenses/by/4.0/