2024-03-28T15:25:50Z
https://u-ryukyu.repo.nii.ac.jp/oai
oai:u-ryukyu.repo.nii.ac.jp:02011259
2023-08-03T05:29:21Z
1642838163960:1642838338003
1642838403551:1642838406845
Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate
Koswaththage, Charith Jayanada
Okada, Tatsuya
Noguchi, Takashi
Taniguchi, Shinichi
Yoshitome, Shokichi
InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm^2/(Vs) was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520°C for 30 sec or more without adopting epitaxial growth on glass.
論文
http://purl.org/coar/resource_type/c_6501
American Institute of Physics
2016-12-01
VoR
http://hdl.handle.net/20.500.12000/47345
2158-3226
AIP Advances
11
6
eng
https://doi.org/10.1063/1.4967287
https://doi.org/10.1063/1.4967287
open access
Creative Commons Attribution 4.0
http://creativecommons.org/licenses/by/4.0/