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aip.orgtrue10.1063/1.49672872016-11-01Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate
10.1063/1.4967287http://dx.doi.org/10.1063/1.4967287
doi:10.1063/1.4967287Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrateCharith Jayanada KoswaththageTatsuya OkadaTakashi NoguchiShinichi TaniguchiShokichi Yoshitomeelectron mobilityHall mobilityIII-V semiconductorsindium compoundsrapid thermal annealingsemiconductor thin filmsvacuum deposition
2016-11-01trueaip.org10.1063/1.4967287
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