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Analysis of stability in a solute field under liquid phase epitaxy
http://hdl.handle.net/20.500.12000/160
http://hdl.handle.net/20.500.12000/16062328fa1-1a8d-4b8e-b228-1708cdbbf9b7
名前 / ファイル | ライセンス | アクション |
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saitou_m04.pdf
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Item type | デフォルトアイテムタイプ(フル)(1) | |||||||||
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公開日 | 2007-03-01 | |||||||||
タイトル | ||||||||||
タイトル | Analysis of stability in a solute field under liquid phase epitaxy | |||||||||
言語 | en | |||||||||
作成者 |
Saitou, Masatoshi
× Saitou, Masatoshi
× Motoyama, S
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アクセス権 | ||||||||||
アクセス権 | open access | |||||||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||
権利情報 | ||||||||||
言語 | en | |||||||||
権利情報 | Copyright (1998) American Institute of Physics | |||||||||
主題 | ||||||||||
言語 | en | |||||||||
主題Scheme | Other | |||||||||
主題 | SILICON | |||||||||
内容記述 | ||||||||||
内容記述タイプ | Other | |||||||||
内容記述 | We reported a critical gap length between two silicon substrates at which no epitaxial layer was grown on the upper silicon substrate [M. Saitou and S. Itomura, J. Mater. Sci.: Mater. Electron. 8, 321 (1997)]. In this study, using perturbation theory and a numerical solution, the abrupt change in the growth rate is investigated. We find that a nondimensional parameter GrSc partial derivative c/partial derivative y determines the instability in a solute field, and that under a critical value of this parameter no epitaxial growth on the substrate sets in because diffusion governs the mass transport of the silicon solute. | |||||||||
内容記述 | ||||||||||
内容記述タイプ | Other | |||||||||
内容記述 | 論文 | |||||||||
出版者 | ||||||||||
言語 | en | |||||||||
出版者 | American Institute of Physics | |||||||||
言語 | ||||||||||
言語 | eng | |||||||||
資源タイプ | ||||||||||
資源タイプ | journal article | |||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
出版タイプ | ||||||||||
出版タイプ | VoR | |||||||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||
識別子 | ||||||||||
識別子 | http://hdl.handle.net/20.500.12000/160 | |||||||||
識別子タイプ | HDL | |||||||||
関連情報 | ||||||||||
識別子タイプ | URI | |||||||||
関連識別子 | http://scitation.aip.org/japo/ | |||||||||
関連情報 | ||||||||||
識別子タイプ | DOI | |||||||||
関連識別子 | 10.1063/1.368843 | |||||||||
収録物識別子 | ||||||||||
収録物識別子タイプ | ISSN | |||||||||
収録物識別子 | 00218979 | |||||||||
収録物識別子 | ||||||||||
収録物識別子タイプ | NCID | |||||||||
収録物識別子 | AA00693547 | |||||||||
収録物名 | ||||||||||
言語 | en | |||||||||
収録物名 | JOURNAL OF APPLIED PHYSICS | |||||||||
書誌情報 |
巻 84, 号 10, p. 5780-5784, 発行日 1998-11-15 |