@article{oai:u-ryukyu.repo.nii.ac.jp:02000839,
 author = {Saitou, Masatoshi and Motoyama, S},
 issue = {10},
 journal = {JOURNAL OF APPLIED PHYSICS},
 month = {Nov},
 note = {We reported a critical gap length between two silicon substrates at which no epitaxial layer was grown on the upper silicon substrate [M. Saitou and S. Itomura, J. Mater. Sci.: Mater. Electron. 8, 321 (1997)]. In this study, using perturbation theory and a numerical solution, the abrupt change in the growth rate is investigated. We find that a nondimensional parameter GrSc partial derivative c/partial derivative y determines the instability in a solute field, and that under a critical value of this parameter no epitaxial growth on the substrate sets in because diffusion governs the mass transport of the silicon solute., 論文},
 pages = {5780--5784},
 title = {Analysis of stability in a solute field under liquid phase epitaxy},
 volume = {84},
 year = {1998}
}