{"created":"2022-01-24T09:33:35.240887+00:00","id":2000839,"links":{},"metadata":{"_buckets":{"deposit":"8d9cff51-ef18-4e31-bcc7-293974c37785"},"_deposit":{"id":"2000839","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"2000839"},"status":"published"},"_oai":{"id":"oai:u-ryukyu.repo.nii.ac.jp:02000839","sets":["1642838163960:1642838338003","1642838403551:1642838406845"]},"author_link":[],"item_30002_access_rights4":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_30002_bibliographic_information29":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1998-11-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"10","bibliographicPageEnd":"5784","bibliographicPageStart":"5780","bibliographicVolumeNumber":"84"}]},"item_30002_creator2":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Saitou, Masatoshi","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Motoyama, S","creatorNameLang":"en"}]}]},"item_30002_description9":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"We reported a critical gap length between two silicon substrates at which no epitaxial layer was grown on the upper silicon substrate [M. Saitou and S. Itomura, J. Mater. Sci.: Mater. Electron. 8, 321 (1997)]. In this study, using perturbation theory and a numerical solution, the abrupt change in the growth rate is investigated. We find that a nondimensional parameter GrSc partial derivative c/partial derivative y determines the instability in a solute field, and that under a critical value of this parameter no epitaxial growth on the substrate sets in because diffusion governs the mass transport of the silicon solute.","subitem_description_type":"Other"},{"subitem_description":"論文","subitem_description_type":"Other"}]},"item_30002_file35":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","filename":"saitou_m04.pdf","mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://u-ryukyu.repo.nii.ac.jp/record/2000839/files/saitou_m04.pdf"},"version_id":"a93c54cd-5908-4abe-9a20-762f981b1ee8"}]},"item_30002_identifier16":{"attribute_name":"Identifier","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/20.500.12000/160"}]},"item_30002_language12":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_30002_publisher10":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_30002_relation18":{"attribute_name":"Relation","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://scitation.aip.org/japo/","subitem_relation_type_select":"URI"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1063/1.368843","subitem_relation_type_select":"DOI"}}]},"item_30002_resource_type13":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_30002_rights6":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"Copyright (1998) American Institute of Physics","subitem_rights_language":"en"}]},"item_30002_source_identifier22":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_30002_source_title23":{"attribute_name":"Source Title","attribute_value_mlt":[{"subitem_source_title":"JOURNAL OF APPLIED PHYSICS","subitem_source_title_language":"en"}]},"item_30002_subject8":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_subject":"SILICON","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_30002_title0":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_title":"Analysis of stability in a solute field under liquid phase epitaxy","subitem_title_language":"en"}]},"item_30002_version_type15":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_title":"Analysis of stability in a solute field under liquid phase epitaxy","item_type_id":"30002","owner":"1","path":["1642838338003","1642838406845"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-03-01"},"publish_date":"2007-03-01","publish_status":"0","recid":"2000839","relation_version_is_last":true,"title":["Analysis of stability in a solute field under liquid phase epitaxy"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2025-02-18T11:22:40.225786+00:00"}