@article{oai:u-ryukyu.repo.nii.ac.jp:02000975,
 author = {Saitou, Masatoshi and Sakae, K and Oshikawa, W},
 issue = {1},
 journal = {Surface & Coatings Technology},
 month = {Jan},
 note = {Germanium thin films electrochemically deposited at 300 K from a solution of GeCl4, in propylene glycol were investigated using X-ray diffraction (XRD), infrared (IR) spectroscopy and atomic force microscopy (AFM). XRD reveals that the germanium electrodeposits are of crystalline structure and have the preferred crystallographic growth orientation [220]. The presence of the hydrogen bonding in the germanium films such as Ge-H and Ge-H-2 is shown from the IR absorption and does not cause a phase transition from crystalline structures to amorphous structures. The AFM images exhibit anomalous surface roughening behaviors in growth that deviate from statistical surface growth models and indicate a transition from rough surfaces to smooth surfaces., 論文},
 pages = {101--105},
 title = {Evaluation of crystalline germanium thin films electrodeposited on copper substrates from propylene glycol electrolyte},
 volume = {162},
 year = {2003}
}