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\u4eca\u5f8c\u306f,\u591a\u5b54\u8cea\u30b7\u30ea\u30b3\u30f3\u306e\u6210\u9577\u30e1\u30ab\u30cb\u30ba\u30e0\u3092\u89e3\u660e\u3057\u3066,\u6df1\u3055\u65b9\u5411\u306b\u5bfe\u3059\u308b\u6a2a\u65b9\u5411\u6210\u9577\u6bd4\u304c\u5c0f\u3055\u304f\u306a\u308b\u967d\u6975\u5316\u6210\u6761\u4ef6\u3092\u63a2\u7d22\u3057\u3066,1\u03bcm\u30b5\u30a4\u30ba\u306ePS3DPS\u3092\u5b9f\u73fe\u3059\u308b\u7814\u7a76\u3092\u3055\u3089\u306b\u9032\u3081\u308b\u5fc5\u8981\u304c\u3042\u308b.", "subitem_description_type": "Other"}, {"subitem_description": "\u7814\u7a76\u6982\u8981\uff1aWhen a silicon substrate is anodized in HF solution at a current density lower than the critical current density porous silicon layers(PS) are formed on the silicon substrate. The porosity of the PS relating to the refractive index can be controlled easily by the formation current density. A PS-three dimensional periodic structure(PS3DPS) is fabricated at the surface layer of the silicon substrate by self-cloning a PS-square lattice pattern formed on the silicon substrate by the selective anodization method. The self-cloning is carried out by modulating the formation current density periodically. This PS3DPS is expected to be applied to three-dimensional photonic crystals. This project purpose is to reduce the size of square-lattice of PS3DPS to the wavelength of infrared region or about 1 micron meter and to develop the fabrication technique. In order to use the examination results for fabricating 1 micron-meter-size PS3DPS, the structures of the PS-one dimensional periodic structures(PS1DPS) were examined by scanning electron microscope and X-ray double-crystal method. PS1DPSs with the almost same periods as designed were fabricated by the current density modulation method in which the currents of 10mA/cm^2 and 50mA/cm^2 were periodically thrown. We fabricated the PS3DPSs by self-cloning method using the photomask of 1\u301c20\u03bcm square lattice and the current density modulation method developed for fabrication of PS1DPS. The structures of the PS3DPS were investigated by scanning electron microscope. The results are as follows : (1)Negative type photoresist was rather suitable as a resist mask for selective anodization than Positive type photoresist. (2)A 5\u03bcm-square-lattice PS3DPS of 3.5 periods or 7 layers and the each layer length of 1\u03bcm was able to fabricate. In the PS3DPS the structure changed to PS1DPS at deeper region than the seventh layer. The such fabrication trouble of PS3DPS was caused so that the PS grows not only depth direction but also lateral direction. In future, we need to find the fabrication conditions which reduce the ratio of the growth rate in lateral direction to the rate in depth direction studying the growth mechanism of PS so that we can fabricate 1\u03bcm-square-lattice PS3DPS with enough numbers of period to apply to photonic crystal.", "subitem_description_type": "Other"}, {"subitem_description": "\u672a\u516c\u958b\uff1aP.38\u4ee5\u964d\uff08\u629c\u5237\u8ad6\u6587\u306e\u305f\u3081\uff09", "subitem_description_type": "Other"}, {"subitem_description": "\u7814\u7a76\u5831\u544a\u66f8", "subitem_description_type": "Other"}]}, "item_1617186643794": {"attribute_name": "Publisher", "attribute_value_mlt": [{"subitem_1522300295150": "ja", "subitem_1522300316516": "\u524d\u6ff1\u525b\u5ee3"}]}, "item_1617186702042": {"attribute_name": "Language", "attribute_value_mlt": [{"subitem_1551255818386": "jpn"}]}, "item_1617186783814": {"attribute_name": "Identifier", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/20.500.12000/12007"}]}, "item_1617186920753": {"attribute_name": "Source Identifier", "attribute_value_mlt": [{"subitem_1522646500366": "NCID", "subitem_1522646572813": "BA74722639"}]}, "item_1617258105262": {"attribute_name": "Resource Type", "attribute_value_mlt": [{"resourcetype": "research report", "resourceuri": "http://purl.org/coar/resource_type/c_18ws"}]}, "item_1617265215918": {"attribute_name": "Version Type", "attribute_value_mlt": [{"subitem_1522305645492": "VoR", "subitem_1600292170262": "http://purl.org/coar/version/c_970fb48d4fbd8a85"}]}, "item_1617605131499": {"attribute_name": "File", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_access", "download_preview_message": "", "file_order": 0, "filename": "14550326.pdf", "future_date_message": "", "is_thumbnail": false, "mimetype": "", "size": 0, "url": {"objectType": "fulltext", "url": "https://u-ryukyu.repo.nii.ac.jp/record/2004827/files/14550326.pdf"}, "version_id": "57d19e8d-0a09-4e9a-bdef-04889322095b"}]}, "item_title": "\u591a\u5b54\u8cea\u30b7\u30ea\u30b3\u30f33\u6b21\u5143\u5468\u671f\u69cb\u9020\u4f5c\u88fd\u305d\u306e\u69cb\u9020\uff65\u7279\u6027\u8a55\u4fa1", "item_type_id": "15", "owner": "1", "path": ["1642838403123", "1642838406845"], "permalink_uri": "http://hdl.handle.net/20.500.12000/12007", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2009-08-25"}, "publish_date": "2009-08-25", "publish_status": "0", "recid": "2004827", "relation": {}, "relation_version_is_last": true, "title": ["\u591a\u5b54\u8cea\u30b7\u30ea\u30b3\u30f33\u6b21\u5143\u5468\u671f\u69cb\u9020\u4f5c\u88fd\u305d\u306e\u69cb\u9020\uff65\u7279\u6027\u8a55\u4fa1"], "weko_shared_id": -1}
多孔質シリコン3次元周期構造作製その構造・特性評価
http://hdl.handle.net/20.500.12000/12007
http://hdl.handle.net/20.500.12000/12007