{"created":"2022-01-27T08:18:26.554524+00:00","id":2004871,"links":{},"metadata":{"_buckets":{"deposit":"3d404a4a-7079-4b5a-a859-8ee9ffdd251a"},"_deposit":{"id":"2004871","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"2004871"},"status":"published"},"_oai":{"id":"oai:u-ryukyu.repo.nii.ac.jp:02004871","sets":["1642837622505:1642837855274:1642837869918","1642838403551:1642838406845"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_1551255647225":"X線二結晶法によるストライプ状SiO_2/GaAs基板の格子歪分布の測定","subitem_1551255648112":"ja"},{"subitem_1551255647225":"Measurement of Lattice Strain Distribution of Striped Si0_2/GaAs Substrate by X-ray Double Crystal Method","subitem_1551255648112":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"前濱, 剛廣","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"新里, 樹","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"安冨祖, 忠信","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Maehama, Takehiro","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Shinzato, Itsuki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Afuso, Chusin","creatorNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_1522299639480":"open access","subitem_1600958577026":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"X-ray double crystal method"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"Gallium arsenide"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"Silicon dioxide film"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"Lattice strain"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"Two measurement methods, slit-slide method and X-ray topography were applied to measure relative lattice strain distribution of striped SiO_2/GaAs. In the slit-slide method the fine distribution of the lattice strain was not detected. because X-ray beams through the slit of 26μm  was too broad to focus on the area where the lattice strain varied abruptly. On the other hand X-ray topographs showed clear contrast \\nwhich represents the lattice strain distribution. Each time X-ray incidence angle was increased or decreased by several second of arc from Bragg angle the topograph was taken. By comparing the contrast of these topographs, the lattice strain distribution was determined. The results shows that the strain distributes in narrow areas (about 10-μm width) along the borderline between d-stripe and r-stripe. The strain distributes in the narrow area along left and right borderlines of the d-stripe from +128\" to -48\"and from +56\" to -128\", respectively. The difference of the strain distribution between the left and the right border areas shows that the lattice planes in both border areas are tilted in opposite directions.","subitem_description_type":"Other"},{"subitem_description":"紀要論文","subitem_description_type":"Other"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_1522300295150":"ja","subitem_1522300316516":"琉球大学工学部"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_1551255818386":"jpn"}]},"item_1617186783814":{"attribute_name":"Identifier","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/20.500.12000/12407"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_1522646500366":"ISSN","subitem_1522646572813":"0389-102X"},{"subitem_1522646500366":"NCID","subitem_1522646572813":"AN0025048X"}]},"item_1617186941041":{"attribute_name":"Source Title","attribute_value_mlt":[{"subitem_1522650068558":"ja","subitem_1522650091861":"琉球大学工学部紀要"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1994-09-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"48","bibliographicPageEnd":"158","bibliographicPageStart":"147"}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_1522305645492":"VoR","subitem_1600292170262":"http://purl.org/coar/version/c_970fb48d4fbd8a85"}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","filename":"No48p147.pdf","mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://u-ryukyu.repo.nii.ac.jp/record/2004871/files/No48p147.pdf"},"version_id":"09c47af0-c55e-4833-836d-0fe27c715f29"}]},"item_title":"X線二結晶法によるストライプ状SiO_2/GaAs基板の格子歪分布の測定","item_type_id":"15","owner":"1","path":["1642837869918","1642838406845"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2009-09-07"},"publish_date":"2009-09-07","publish_status":"0","recid":"2004871","relation_version_is_last":true,"title":["X線二結晶法によるストライプ状SiO_2/GaAs基板の格子歪分布の測定"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2022-10-31T02:24:44.414330+00:00"}