{"created":"2022-01-27T08:18:47.163964+00:00","id":2004880,"links":{},"metadata":{"_buckets":{"deposit":"4e15c974-b17d-4088-9ca0-53fa106ea6ee"},"_deposit":{"id":"2004880","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"2004880"},"status":"published"},"_oai":{"id":"oai:u-ryukyu.repo.nii.ac.jp:02004880","sets":["1642837622505:1642837855274:1642837861518","1642838403551:1642838406845"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_1551255647225":"Si-doped GaAs単結晶の転位の上昇と二次元欠陥 －X線トポグラフィーによる観測－","subitem_1551255648112":"ja"},{"subitem_1551255647225":"Observation of Dislocation Climbing with Two-dimensional Defects in Si-doped GaAs Crystal by X-ray Topography","subitem_1551255648112":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"前濱, 剛廣","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"安冨祖, 忠信","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Maehama, Takehiro","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Afuso, Chushin","creatorNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_1522299639480":"open access","subitem_1600958577026":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"Gallium arsenide"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"Dislocation"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"X-ray diffraction topography"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"A formation mechanism of two-dimensional defects which are produced in a Si-doped GaAs crystal during heat-treatment has been studied by X-ray diffraction topography. The Si-doped GaAs crystal was heat-treated for 72 hours at 1000℃ under 600 Torr arsenic pressure. X-ray diffraction topographs of the crystal were taken before and after heat-treatment. Then the surface of the crystal was etched by RC-1 etchant for revealing figures of defects. From these topographs we find that dislocations in the crystal climb to absorb some kind of point defects during heat-treatment. From etch figures we also find that two-dimensional defects which are never observed in the X-ray diffraction topograph are formed over tracts of dislocations climbing.","subitem_description_type":"Other"},{"subitem_description":"紀要論文","subitem_description_type":"Other"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_1522300295150":"ja","subitem_1522300316516":"琉球大学工学部"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_1551255818386":"jpn"}]},"item_1617186783814":{"attribute_name":"Identifier","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/20.500.12000/12488"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_1522646500366":"ISSN","subitem_1522646572813":"0389-102X"},{"subitem_1522646500366":"NCID","subitem_1522646572813":"AN0025048X"}]},"item_1617186941041":{"attribute_name":"Source Title","attribute_value_mlt":[{"subitem_1522650068558":"ja","subitem_1522650091861":"琉球大学工学部紀要"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1986-03","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"31","bibliographicPageEnd":"60","bibliographicPageStart":"51"}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_1522305645492":"VoR","subitem_1600292170262":"http://purl.org/coar/version/c_970fb48d4fbd8a85"}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","filename":"No31p051.pdf","mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://u-ryukyu.repo.nii.ac.jp/record/2004880/files/No31p051.pdf"},"version_id":"d647b08f-efdd-4fc9-990c-176efc5b2347"}]},"item_title":"Si-doped GaAs単結晶の転位の上昇と二次元欠陥 －X線トポグラフィーによる観測－","item_type_id":"15","owner":"1","path":["1642837861518","1642838406845"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2009-09-15"},"publish_date":"2009-09-15","publish_status":"0","recid":"2004880","relation_version_is_last":true,"title":["Si-doped GaAs単結晶の転位の上昇と二次元欠陥 －X線トポグラフィーによる観測－"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2022-10-31T02:24:55.812103+00:00"}