@article{oai:u-ryukyu.repo.nii.ac.jp:02004881,
 author = {前濱, 剛廣 and Maehama, Takehiro},
 issue = {28},
 journal = {琉球大学工学部紀要},
 month = {Oct},
 note = {Si-doped and non-doped GaAs crystals are heat-treated for 72 hours at 1000℃ under 600 Torr arrsenic pressure. Arrow-shaped etch figures, which have never been found on as-grown Si-doped GaAs crystals, are formed on As (1^^-1^^-1^^-) surface of heat-treated Si-doped GaAs  crystal, but these etch figures did not appear on non-doped case. The arrow-shaped etch figure corresponds to a two-dimensional defect  which is formed by dislocation clibming. The dislocation clibming mechanism and the formation mechanism of the two-dimensional defect are discussed precisely and a model of the formation is proposed. which concerns with Si-impurities and As interstitials., 紀要論文},
 pages = {47--53},
 title = {Si-doped GaAs単結晶の転位の上昇と二次元欠陥 －エッチング法による観測－},
 year = {1984}
}