{"created":"2022-01-27T08:18:50.273257+00:00","id":2004882,"links":{},"metadata":{"_buckets":{"deposit":"69b5fe98-70fd-4e3a-9a39-54baceec982d"},"_deposit":{"id":"2004882","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"2004882"},"status":"published"},"_oai":{"id":"oai:u-ryukyu.repo.nii.ac.jp:02004882","sets":["1642837622505:1642837855274:1642837858306","1642838403551:1642838406845"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_1551255647225":"転位線のエッチング速度","subitem_1551255648112":"ja"},{"subitem_1551255647225":"Etching Rate along Dislocations","subitem_1551255648112":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"前浜, 剛廣","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Maehama, Takehiro","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"前濱, 剛廣","creatorNameLang":"ja"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_1522299639480":"open access","subitem_1600958577026":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"Etching rate"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"Dislocation"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"Galliumarsenide"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"A measurement method is proposed for etching rate along a dislocation. The method is applied to dislocation lines and partial dislocation loops in ｛111｝n-GaAs wafers with RC-1 etchant. The results show that the etching rate of the dislocation perpendicular to the etched surface is about 1.5 times as large as the surface etching rate. The results show also that the activation energy of etching dislocation is smaller than the activation energy of the surface. A formula is proposed which correlates the etching rate of the dislocation to the angle between the dislocation and the surface. From the formula the critical angle under which the dislocation etch pits are not formed is estimated.","subitem_description_type":"Other"},{"subitem_description":"紀要論文","subitem_description_type":"Other"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_1522300295150":"ja","subitem_1522300316516":"琉球大学工学部"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_1551255818386":"jpn"}]},"item_1617186783814":{"attribute_name":"Identifier","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/20.500.12000/12490"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_1522646500366":"ISSN","subitem_1522646572813":"0389-102X"},{"subitem_1522646500366":"NCID","subitem_1522646572813":"AN0025048X"}]},"item_1617186941041":{"attribute_name":"Source Title","attribute_value_mlt":[{"subitem_1522650068558":"ja","subitem_1522650091861":"琉球大学工学部紀要"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1982-09","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"24","bibliographicPageEnd":"92","bibliographicPageStart":"85"}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_1522305645492":"VoR","subitem_1600292170262":"http://purl.org/coar/version/c_970fb48d4fbd8a85"}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","filename":"No24p085.pdf","mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://u-ryukyu.repo.nii.ac.jp/record/2004882/files/No24p085.pdf"},"version_id":"ad43f7c7-316f-473a-b8cf-e586ed2f54a7"}]},"item_title":"転位線のエッチング速度","item_type_id":"15","owner":"1","path":["1642837858306","1642838406845"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2009-09-15"},"publish_date":"2009-09-15","publish_status":"0","recid":"2004882","relation_version_is_last":true,"title":["転位線のエッチング速度"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2022-10-31T02:24:59.085443+00:00"}