{"created":"2022-01-28T01:00:06.368173+00:00","id":2005049,"links":{},"metadata":{"_buckets":{"deposit":"7a7e9ecb-d406-4044-bb3a-af17352de7c5"},"_deposit":{"id":"2005049","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"2005049"},"status":"published"},"_oai":{"id":"oai:u-ryukyu.repo.nii.ac.jp:02005049","sets":["1642838403123","1642838403551:1642838406845"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_1551255647225":"動的スケーリング理論を用いたAFMによる電気めっき薄膜の成長機構に関する研究","subitem_1551255648112":"ja"},{"subitem_1551255647225":"Dynamic Scaling Study of Thin Films in electrodeposition Growth Using AFM","subitem_1551255648112":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"斉藤, 正敏","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"押川, 渡","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Saitou, Masatoshi","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Oshikawa, Wataru","creatorNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_1522299639480":"open access","subitem_1600958577026":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_1522299896455":"ja","subitem_1522300014469":"Other","subitem_1523261968819":"スケーリング関数"},{"subitem_1522299896455":"ja","subitem_1522300014469":"Other","subitem_1523261968819":"電析"},{"subitem_1522299896455":"ja","subitem_1522300014469":"Other","subitem_1523261968819":"パルス電流"},{"subitem_1522299896455":"ja","subitem_1522300014469":"Other","subitem_1523261968819":"3次元成長"},{"subitem_1522299896455":"ja","subitem_1522300014469":"Other","subitem_1523261968819":"2次元成長"},{"subitem_1522299896455":"ja","subitem_1522300014469":"Other","subitem_1523261968819":"ユニバーサリティ"},{"subitem_1522299896455":"ja","subitem_1522300014469":"Other","subitem_1523261968819":"スケーリング指数"},{"subitem_1522299896455":"ja","subitem_1522300014469":"Other","subitem_1523261968819":"優先成長方位"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"scaling function"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"electrodeposition"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"pulse-current"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"three-dimensional growth"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"two-dimensional growth"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"universality class"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"scaling exponent"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"preferential growth direction"},{"subitem_1522299896455":"ja","subitem_1522300014469":"Other","subitem_1523261968819":"動的スケーリング"},{"subitem_1522299896455":"ja","subitem_1522300014469":"Other","subitem_1523261968819":"ACインピーダンススペクトロスコピー"},{"subitem_1522299896455":"ja","subitem_1522300014469":"Other","subitem_1523261968819":"表面成長"},{"subitem_1522299896455":"ja","subitem_1522300014469":"Other","subitem_1523261968819":"ニッケル"},{"subitem_1522299896455":"ja","subitem_1522300014469":"Other","subitem_1523261968819":"電荷移動反応"},{"subitem_1522299896455":"ja","subitem_1522300014469":"Other","subitem_1523261968819":"確率論的微分方程式"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"科研費番号: 13650029","subitem_description_type":"Other"},{"subitem_description":"平成13年度～平成14年度科学研究費補助金（基盤研究C2）研究成果報告書","subitem_description_type":"Other"},{"subitem_description":"研究概要：(1)3次元的成長電析したニッケル薄膜の成長が3次元的成長をする場合、表面粗さは、当初予想していた標準スケーリング関数ではなく、anomalousスケーリング関数【numerical formula】に従う。ここでLは、系の大きさ、lは、Lから切り取った窓の大きさ、β*=(ζ-ζ_<loc>)/zである。これは、これまでにない実験結果であり、スケーリングは、ζ_<loc>とζによって決定され、ζは、実験条件に依存し、ζ_<loc>は、系の詳細に依らない指数を意味している。実験結果は、(a)直流電流のとき、local roughness exponent ζ_<loc>=1、global scalingexponent ζ=2.8、dynamic exponent z=4.1、優先成長方位 (111)、パルス電流のときζ_<loc>=1、ζ=2.1、z=1.0、優先成長方位 (111)、(220)、(311)であった。3次元的成長は、super-rougheningと呼ばれる他の薄膜成長とは異なる成長機構であり、電流が定常とパルスでは、X線回折から成長優先方位の相違があるが、成長機構に変化はないと結論付けられる。 (2)2次元的成長電析したニッケル薄膜が2次元的成長(エピタキシャル成長)をする場合、表面粗さは、当初予想していた標準スケーリング関数に従い、AFM像の解析結果からα=0.25,β=1.0であり、Edwards-Wilkinsonユニバーサリティクラス(MBE成長に相当)に属することが判明した。従って電気めっきの2次元成長は、線形な表面拡散が支配し、その駆動力は、表面の化学ポテンシャル勾配であり、エピタキシャル成長に必要な十分な拡散長を有する。実際、定常電流下、成長速度0.2monolayer/secの成長速度、(100)ニッケル単結晶上への2次元的成長成長が成長時間10000秒までの間で確認された。","subitem_description_type":"Other"},{"subitem_description":"要約（英文）:(1) Three-dimensional growth in electrodeposition we have made investigation into scaling properties of nickel surfaces grown by pulse-current electrodeposition using atomic force microscopy. The surface growth exhibits an anomalous dynamic scaling behavior characterized by a local roughness exponent ζ_<loc>, global scaling exponent ζ and dynamic exponent z for an intermediate time regime I^z < L^z where I and L denote a window length and system size. The local interface width of the nickel surfaces leads to ζ_<loc>=1.0, global scaling exponent ζ=2.8 and dynamic exponent z=4.1. All the experimental data collapse on a plot of the anomalous scaling function. (2) Two-dimensional growth in electrodeposition Surface growth of Ni thin films electrodeposited on (100) Ni substrates has been investigated using atomic force microscopy. In the early stage of growth, islands nucleated on the (100) Ni substrates, which appear to be rectangular in cross section, grow laterally in the same crystallographic orientation. Growth surfaces are shown to display a normal scaling behavior characterized by the linear surface diffusion universality class. Along the time evolution, instability in growth occurs and a transition from two-dimensional growth to three-dimensional growth is observed. In this stage, surface growth obeys anomalous scaling characterized by a local roughness exponent ζ_<loc>=1.0, global scaling exponent ζ=2.1 and dynamic exponent z=1.0.","subitem_description_type":"Other"},{"subitem_description":"未公開：P.20以降（別刷り論文のため）","subitem_description_type":"Other"},{"subitem_description":"研究報告書","subitem_description_type":"Other"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_1522300295150":"ja","subitem_1522300316516":"斉藤正敏"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_1551255818386":"jpn"}]},"item_1617186783814":{"attribute_name":"Identifier","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/20.500.12000/13427"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_1522646500366":"NCID","subitem_1522646572813":"BA64205845"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-05","bibliographicIssueDateType":"Issued"}}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_1522305645492":"VoR","subitem_1600292170262":"http://purl.org/coar/version/c_970fb48d4fbd8a85"}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","filename":"13650029.pdf","mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://u-ryukyu.repo.nii.ac.jp/record/2005049/files/13650029.pdf"},"version_id":"e1ebf428-b1b1-4996-ae20-7bb9c2027520"}]},"item_title":"動的スケーリング理論を用いたAFMによる電気めっき薄膜の成長機構に関する研究","item_type_id":"15","owner":"1","path":["1642838403123","1642838406845"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2009-11-25"},"publish_date":"2009-11-25","publish_status":"0","recid":"2005049","relation_version_is_last":true,"title":["動的スケーリング理論を用いたAFMによる電気めっき薄膜の成長機構に関する研究"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2022-10-31T02:28:23.182959+00:00"}