@article{oai:u-ryukyu.repo.nii.ac.jp:02005207,
 author = {宮城, 光秀 and 新垣, 学 and 比嘉, 晃 and 渡久地, 實 and 安冨祖, 忠信 and Miyagi, Mitsuhide and Arakaki, Manabu and Higa, Akira and Toguchi, Minoru and Afuso, Chushin},
 issue = {46},
 journal = {琉球大学工学部紀要},
 month = {Sep},
 note = {Diamond films have been synthesized on Si (100) substrate by hot-filamet chimical vapor deposition (H-F CVD). The reaction gases are CH_4/H_2. CH_3OH/H_2 and C_2H_5OH/H_2 mixture. The films were evaluated by scanning electron microscopy (SEM), electron diffraction and Raman spectroscopy. Diamond films composed of well-faceted particles have been formed with CH_3OH/H_2 mixture, at substrate temperature 800℃, at filament temperature 200℃, under gas pressures ranging from 10 Torr to 30 Torr and at concentrations of CH_3OH ranging from 29 vol. % to 38 vol. %. Nucreation density and growth rate of diamond films increased in at high filament temperature and in using organic compounds which have lower dissociation energy. It is considered that the ratio of atomic carbon to atomic hydrogen generated from the original gas mixture is important for diamond growth., 紀要論文},
 pages = {203--217},
 title = {熱フィラメントCVD法によるダイヤモンド薄膜の合成とその評価},
 year = {1993}
}