{"created":"2022-01-28T07:07:00.809660+00:00","id":2008478,"links":{},"metadata":{"_buckets":{"deposit":"f504d270-9cc1-4654-942c-fcf870fa3135"},"_deposit":{"id":"2008478","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"2008478"},"status":"published"},"_oai":{"id":"oai:u-ryukyu.repo.nii.ac.jp:02008478","sets":["1642838158423:1642838158860:1642838161450","1642838403551:1642838411479"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_1551255647225":"レーザーアニールによる接合形成と高性能パワーSi MOS FETs に関する研究","subitem_1551255648112":"ja"},{"subitem_1551255647225":"Research on Junction Formation Using Laser Annealing For High Performance Si Power MOS FETs","subitem_1551255648112":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"陳, 訳","creatorNameLang":"ja"}]},{"creatorNames":[{"creatorName":"Chen, Yi","creatorNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_1522299639480":"open access","subitem_1600958577026":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"学位論文","subitem_description_type":"Other"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_1522300295150":"ja","subitem_1522300316516":"琉球大学"},{"subitem_1522300295150":"en","subitem_1522300316516":"University of the Ryukyus"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_1551255818386":"jpn"}]},"item_1617186783814":{"attribute_name":"Identifier","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/20.500.12000/35665"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-09","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"none"}]},"item_1617187087799":{"attribute_name":"Dissertation Number","attribute_value_mlt":[{"subitem_1551256171004":"甲第321号"}]},"item_1617187112279":{"attribute_name":"Degree Name","attribute_value_mlt":[{"subitem_1551256126428":"博士(工学)","subitem_1551256129013":"ja"}]},"item_1617187136212":{"attribute_name":"Date Granted","attribute_value_mlt":[{"subitem_1551256096004":"2016-09-14"}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"doctoral thesis","resourceuri":"http://purl.org/coar/resource_type/c_db06"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_1522305645492":"VoR","subitem_1600292170262":"http://purl.org/coar/version/c_970fb48d4fbd8a85"}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","filename":"rikoken321review.pdf","mimetype":"application/pdf","url":{"objectType":"other","url":"https://u-ryukyu.repo.nii.ac.jp/record/2008478/files/rikoken321review.pdf"},"version_id":"ccc165c7-be4a-451c-99cc-f83bca58c30e"},{"accessrole":"open_access","filename":"rikoken321text.pdf","mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://u-ryukyu.repo.nii.ac.jp/record/2008478/files/rikoken321text.pdf"},"version_id":"4920331d-6aa7-41be-b811-428dd4364af6"},{"accessrole":"open_access","filename":"rikoken321digest.pdf","mimetype":"application/pdf","url":{"objectType":"summary","url":"https://u-ryukyu.repo.nii.ac.jp/record/2008478/files/rikoken321digest.pdf"},"version_id":"84e5439b-77ba-4ec0-8611-ecdf0961f2b2"},{"accessrole":"open_access","filename":"rikoken321abstract.pdf","mimetype":"application/pdf","url":{"objectType":"abstract","url":"https://u-ryukyu.repo.nii.ac.jp/record/2008478/files/rikoken321abstract.pdf"},"version_id":"4b97f86e-5982-4d2f-8ea8-b037973dc801"}]},"item_1617944105607":{"attribute_name":"Degree Grantor","attribute_value_mlt":[{"subitem_1551256015892":[{"subitem_1551256027296":"18001","subitem_1551256029891":"kakenhi"}],"subitem_1551256037922":[{"subitem_1551256042287":"琉球大学","subitem_1551256047619":"ja"}]}]},"item_title":"レーザーアニールによる接合形成と高性能パワーSi MOS FETs に関する研究","item_type_id":"15","owner":"1","path":["1642838161450","1642838411479"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2017-03-21"},"publish_date":"2017-03-21","publish_status":"0","recid":"2008478","relation_version_is_last":true,"title":["レーザーアニールによる接合形成と高性能パワーSi MOS FETs に関する研究"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2022-10-31T04:02:31.143223+00:00"}