{"_buckets": {"deposit": "92783955-097e-45be-8ed3-f28889585ea3"}, "_deposit": {"id": "2011252", "owners": [1], "pid": {"revision_id": 0, "type": "depid", "value": "2011252"}, "status": "published"}, "_oai": {"id": "oai:u-ryukyu.repo.nii.ac.jp:02011252", "sets": ["1642838338003", "1642838406845"]}, "author_link": [], "item_1617186331708": {"attribute_name": "Title", "attribute_value_mlt": [{"subitem_1551255647225": "Appearance of the p-channel performance of poly-Si TFTs with a metal S/D electrode using BLDA aiming for low-cost CMOS", "subitem_1551255648112": "en"}]}, "item_1617186419668": {"attribute_name": "Creator", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Ashitomi, Takuya", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Harada, Taisei", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Okada, Tatsuya", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Noguchia, Takashi", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Nishikatab, Osamu", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Ota, Atsushi", "creatorNameLang": "en"}]}]}, "item_1617186476635": {"attribute_name": "Access Rights", "attribute_value_mlt": [{"subitem_1522299639480": "open access", "subitem_1600958577026": "http://purl.org/coar/access_right/c_abf2"}]}, "item_1617186499011": {"attribute_name": "Rights", "attribute_value_mlt": [{"subitem_1522650717957": "en", "subitem_1522651041219": "Creative Commons Attribution 4.0"}, {"subitem_1522650717957": "en", "subitem_1522650727486": "http://creativecommons.org/licenses/by/4.0/", "subitem_1522651041219": "http://creativecommons.org/licenses/by/4.0/"}]}, "item_1617186609386": {"attribute_name": "Subject", "attribute_value_mlt": [{"subitem_1522299896455": "en", "subitem_1522300014469": "Other", "subitem_1523261968819": "Poly Si"}, {"subitem_1522299896455": "en", "subitem_1522300014469": "Other", "subitem_1523261968819": "TFT"}, {"subitem_1522299896455": "en", "subitem_1522300014469": "Other", "subitem_1523261968819": "blue laser diodes annealing"}, {"subitem_1522299896455": "en", "subitem_1522300014469": "Other", "subitem_1523261968819": "p-channel"}, {"subitem_1522299896455": "en", "subitem_1522300014469": "Other", "subitem_1523261968819": "metal source and drain"}]}, "item_1617186626617": {"attribute_name": "Description", "attribute_value_mlt": [{"subitem_description": "Proposed in this study and fabricated on a glass substrate without adopting impurity doping were p-channel polycrystalline silicon (Si) thin-film transistors (TFTs) with a metal source/drain (S/D) electrode. The amorphous 50-nm-thick Si films deposited on a glass substrate via plasma-enhanced chemical vapor deposition were polycrystallized using blue laser diode annealing. Gold (Au), a highwork-function metal, was evaporated for the S/D electrode directly onto the Si channel layer. As a result of the TFT formation, the typical I_d–V_g characteristics of the p-channel TFT were successfully obtained. In addition, after hydrogenation at 200°C, the drain current drastically increased. The 14 cm^2/Vs effective field effect hole mobility was deduced at the drain voltage of −1 V.", "subitem_description_type": "Other"}, {"subitem_description": "論文", "subitem_description_type": "Other"}]}, "item_1617186643794": {"attribute_name": "Publisher", "attribute_value_mlt": [{"subitem_1522300295150": "en", "subitem_1522300316516": "Taylor \u0026 Francis"}]}, "item_1617186702042": {"attribute_name": "Language", "attribute_value_mlt": [{"subitem_1551255818386": "eng"}]}, "item_1617186783814": {"attribute_name": "Identifier", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/20.500.12000/47325"}]}, "item_1617186920753": {"attribute_name": "Source Identifier", "attribute_value_mlt": [{"subitem_1522646500366": "ISSN", "subitem_1522646572813": "1598-0316"}, {"subitem_1522646500366": "ISSN", "subitem_1522646572813": "2158-1606"}]}, "item_1617186941041": {"attribute_name": "Source Title", "attribute_value_mlt": [{"subitem_1522650068558": "en", "subitem_1522650091861": "Journal of Information Display"}]}, "item_1617187056579": {"attribute_name": "Bibliographic Information", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2017", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "4", "bibliographicPageEnd": "189", "bibliographicPageStart": "185", "bibliographicVolumeNumber": "18"}]}, "item_1617258105262": {"attribute_name": "Resource Type", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_1617265215918": {"attribute_name": "Version Type", "attribute_value_mlt": [{"subitem_1522305645492": "VoR", "subitem_1600292170262": "http://purl.org/coar/version/c_970fb48d4fbd8a85"}]}, "item_1617353299429": {"attribute_name": "Relation", "attribute_value_mlt": [{"subitem_1522306287251": {"subitem_1522306382014": "DOI", "subitem_1522306436033": "https://doi.org/10.1080/15980316.2017.1381650"}}, {"subitem_1522306287251": {"subitem_1522306382014": "DOI", "subitem_1522306436033": "https://doi.org/10.1080/15980316.2017.1381650"}}]}, "item_1617605131499": {"attribute_name": "File", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_access", "download_preview_message": "", "file_order": 0, "filename": "Appearance of the p channel performance of poly Si TFTs with a metal S D electrode using BLDA aiming for low cost CMOS.pdf", "future_date_message": "", "is_thumbnail": false, "mimetype": "", "size": 0, "url": {"objectType": "fulltext", "url": "https://u-ryukyu.repo.nii.ac.jp/record/2011252/files/Appearance of the p channel performance of poly Si TFTs with a metal S D electrode using BLDA aiming for low cost CMOS.pdf"}, "version_id": "eadf6cf9-e51a-4ca4-8ba9-a4e98ad3c212"}]}, "item_title": "Appearance of the p-channel performance of poly-Si TFTs with a metal S/D electrode using BLDA aiming for low-cost CMOS", "item_type_id": "15", "owner": "1", "path": ["1642838338003", "1642838406845"], "permalink_uri": "http://hdl.handle.net/20.500.12000/47325", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2020-11-26"}, "publish_date": "2020-11-26", "publish_status": "0", "recid": "2011252", "relation": {}, "relation_version_is_last": true, "title": ["Appearance of the p-channel performance of poly-Si TFTs with a metal S/D electrode using BLDA aiming for low-cost CMOS"], "weko_shared_id": -1}
Appearance of the p-channel performance of poly-Si TFTs with a metal S/D electrode using BLDA aiming for low-cost CMOS
http://hdl.handle.net/20.500.12000/47325
http://hdl.handle.net/20.500.12000/47325