{"created":"2022-02-01T06:39:24.717498+00:00","id":2011252,"links":{},"metadata":{"_buckets":{"deposit":"92783955-097e-45be-8ed3-f28889585ea3"},"_deposit":{"id":"2011252","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"2011252"},"status":"published"},"_oai":{"id":"oai:u-ryukyu.repo.nii.ac.jp:02011252","sets":["1642838163960:1642838338003","1642838403551:1642838406845"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_1551255647225":"Appearance of the p-channel performance of poly-Si TFTs with a metal S/D electrode using BLDA aiming for low-cost CMOS","subitem_1551255648112":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ashitomi, Takuya","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Harada, Taisei","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Okada, Tatsuya","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Noguchia, Takashi","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Nishikatab, Osamu","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Ota, Atsushi","creatorNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_1522299639480":"open access","subitem_1600958577026":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186499011":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_1522650717957":"en","subitem_1522651041219":"Creative Commons Attribution 4.0"},{"subitem_1522650717957":"en","subitem_1522650727486":"http://creativecommons.org/licenses/by/4.0/","subitem_1522651041219":"http://creativecommons.org/licenses/by/4.0/"}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"Poly Si"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"TFT"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"blue laser diodes annealing"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"p-channel"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"metal source and drain"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"Proposed in this study and fabricated on a glass substrate without adopting impurity doping were p-channel polycrystalline silicon (Si) thin-film transistors (TFTs) with a metal source/drain (S/D) electrode. The amorphous 50-nm-thick Si films deposited on a glass substrate via plasma-enhanced chemical vapor deposition were polycrystallized using blue laser diode annealing. Gold (Au), a highwork-function metal, was evaporated for the S/D electrode directly onto the Si channel layer. As a result of the TFT formation, the typical I_d–V_g characteristics of the p-channel TFT were successfully obtained. In addition, after hydrogenation at 200°C, the drain current drastically increased. The 14 cm^2/Vs effective field effect hole mobility was deduced at the drain voltage of −1 V.","subitem_description_type":"Other"},{"subitem_description":"論文","subitem_description_type":"Other"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_1522300295150":"en","subitem_1522300316516":"Taylor & Francis"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_1551255818386":"eng"}]},"item_1617186783814":{"attribute_name":"Identifier","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/20.500.12000/47325"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_1522646500366":"ISSN","subitem_1522646572813":"1598-0316"},{"subitem_1522646500366":"ISSN","subitem_1522646572813":"2158-1606"}]},"item_1617186941041":{"attribute_name":"Source Title","attribute_value_mlt":[{"subitem_1522650068558":"en","subitem_1522650091861":"Journal of Information Display"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2017","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageEnd":"189","bibliographicPageStart":"185","bibliographicVolumeNumber":"18"}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_1522305645492":"VoR","subitem_1600292170262":"http://purl.org/coar/version/c_970fb48d4fbd8a85"}]},"item_1617353299429":{"attribute_name":"Relation","attribute_value_mlt":[{"subitem_1522306287251":{"subitem_1522306382014":"DOI","subitem_1522306436033":"https://doi.org/10.1080/15980316.2017.1381650"}},{"subitem_1522306287251":{"subitem_1522306382014":"DOI","subitem_1522306436033":"https://doi.org/10.1080/15980316.2017.1381650"}}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","filename":"Appearance of the p channel performance of poly Si TFTs with a metal S D electrode using BLDA aiming for low cost CMOS.pdf","mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://u-ryukyu.repo.nii.ac.jp/record/2011252/files/Appearance of the p channel performance of poly Si TFTs with a metal S D electrode using BLDA aiming for low cost CMOS.pdf"},"version_id":"eadf6cf9-e51a-4ca4-8ba9-a4e98ad3c212"}]},"item_title":"Appearance of the p-channel performance of poly-Si TFTs with a metal S/D electrode using BLDA aiming for low-cost CMOS","item_type_id":"15","owner":"1","path":["1642838338003","1642838406845"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-26"},"publish_date":"2020-11-26","publish_status":"0","recid":"2011252","relation_version_is_last":true,"title":["Appearance of the p-channel performance of poly-Si TFTs with a metal S/D electrode using BLDA aiming for low-cost CMOS"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-08-03T05:43:17.670161+00:00"}