{"_buckets": {"deposit": "f81c9d83-8092-4cf1-ae0a-14579198455b"}, "_deposit": {"id": "2011254", "owners": [1], "pid": {"revision_id": 0, "type": "depid", "value": "2011254"}, "status": "published"}, "_oai": {"id": "oai:u-ryukyu.repo.nii.ac.jp:02011254", "sets": ["1642838338003", "1642838406845"]}, "author_link": [], "item_1617186331708": {"attribute_name": "Title", "attribute_value_mlt": [{"subitem_1551255647225": "Low-temperature poly-Si TFTs of metal source and drain using blue-laser-diode annealing (BLDA)", "subitem_1551255648112": "en"}]}, "item_1617186419668": {"attribute_name": "Creator", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Sugihara, Kouya", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Shimoda, Kiyoharu", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Okada, Tatsuya", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Noguchib, Takashi", "creatorNameLang": "en"}]}]}, "item_1617186476635": {"attribute_name": "Access Rights", "attribute_value_mlt": [{"subitem_1522299639480": "open access", "subitem_1600958577026": "http://purl.org/coar/access_right/c_abf2"}]}, "item_1617186499011": {"attribute_name": "Rights", "attribute_value_mlt": [{"subitem_1522650717957": "en", "subitem_1522651041219": "Creative Commons Attribution 4.0"}, {"subitem_1522650717957": "en", "subitem_1522650727486": "http://creativecommons.org/licenses/by/4.0/", "subitem_1522651041219": "http://creativecommons.org/licenses/by/4.0/"}]}, "item_1617186609386": {"attribute_name": "Subject", "attribute_value_mlt": [{"subitem_1522299896455": "en", "subitem_1522300014469": "Other", "subitem_1523261968819": "AMD"}, {"subitem_1522299896455": "en", "subitem_1522300014469": "Other", "subitem_1523261968819": "flexible display"}, {"subitem_1522299896455": "en", "subitem_1522300014469": "Other", "subitem_1523261968819": "material and components"}]}, "item_1617186626617": {"attribute_name": "Description", "attribute_value_mlt": [{"subitem_description": "Blue-laser-diode annealing (BLDA) in the continuous wave mode was performed for sputtered silicon (Si) films. Polycrystalline silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate. For the source and drain formation, titanium (Ti) was evaporated to make the metal directly contact the channel Si film without adopting n+ doping. The improvement of the drain current was confirmed after hydrogen annealing at 400\u00b0C, and the typical poly-Si TFT characteristic with 50 cm2/Vs deduced effective carrier mobility was successfully observed. As the low-cost TFT fabrication without ion implantation becomes feasible, the low-temperature fabrication of poly-Si TFTs using BLDA is expected.", "subitem_description_type": "Other"}, {"subitem_description": "\u8ad6\u6587", "subitem_description_type": "Other"}]}, "item_1617186643794": {"attribute_name": "Publisher", "attribute_value_mlt": [{"subitem_1522300295150": "en", "subitem_1522300316516": "Taylor \u0026 Francis"}]}, "item_1617186702042": {"attribute_name": "Language", "attribute_value_mlt": [{"subitem_1551255818386": "eng"}]}, "item_1617186783814": {"attribute_name": "Identifier", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/20.500.12000/47327"}]}, "item_1617186920753": {"attribute_name": "Source Identifier", "attribute_value_mlt": [{"subitem_1522646500366": "ISSN", "subitem_1522646572813": "1598-0316"}, {"subitem_1522646500366": "ISSN", "subitem_1522646572813": "2158-1606"}]}, "item_1617186941041": {"attribute_name": "Source Title", "attribute_value_mlt": [{"subitem_1522650068558": "en", "subitem_1522650091861": "Journal of Information Display"}]}, "item_1617187056579": {"attribute_name": "Bibliographic Information", "attribute_value_mlt": [{"bibliographicIssueNumber": "4", "bibliographicPageEnd": "176", "bibliographicPageStart": "173", "bibliographicVolumeNumber": "18"}]}, "item_1617258105262": {"attribute_name": "Resource Type", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_1617265215918": {"attribute_name": "Version Type", "attribute_value_mlt": [{"subitem_1522305645492": "VoR", "subitem_1600292170262": "http://purl.org/coar/version/c_970fb48d4fbd8a85"}]}, "item_1617353299429": {"attribute_name": "Relation", "attribute_value_mlt": [{"subitem_1522306287251": {"subitem_1522306382014": "DOI", "subitem_1522306436033": "https://doi.org/10.1080/15980316.2017.1372315"}}, {"subitem_1522306287251": {"subitem_1522306382014": "DOI", "subitem_1522306436033": "https://doi.org/10.1080/15980316.2017.1372315"}}]}, "item_1617605131499": {"attribute_name": "File", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_access", "download_preview_message": "", "file_order": 0, "filename": "Low temperature poly Si TFTs of metal source and drain using blue laser diode annealing BLDA.pdf", "future_date_message": "", "is_thumbnail": false, "mimetype": "", "size": 0, "url": {"objectType": "fulltext", "url": "https://u-ryukyu.repo.nii.ac.jp/record/2011254/files/Low temperature poly Si TFTs of metal source and drain using blue laser diode annealing BLDA.pdf"}, "version_id": "e8c4593e-8430-44c4-8f92-249aa20166c9"}]}, "item_title": "Low-temperature poly-Si TFTs of metal source and drain using blue-laser-diode annealing (BLDA)", "item_type_id": "15", "owner": "1", "path": ["1642838338003", "1642838406845"], "permalink_uri": "http://hdl.handle.net/20.500.12000/47327", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2020-11-26"}, "publish_date": "2020-11-26", "publish_status": "0", "recid": "2011254", "relation": {}, "relation_version_is_last": true, "title": ["Low-temperature poly-Si TFTs of metal source and drain using blue-laser-diode annealing (BLDA)"], "weko_shared_id": -1}