{"created":"2022-02-01T06:39:27.975148+00:00","id":2011254,"links":{},"metadata":{"_buckets":{"deposit":"f81c9d83-8092-4cf1-ae0a-14579198455b"},"_deposit":{"id":"2011254","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"2011254"},"status":"published"},"_oai":{"id":"oai:u-ryukyu.repo.nii.ac.jp:02011254","sets":["1642838163960:1642838338003","1642838403551:1642838406845"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_1551255647225":"Low-temperature poly-Si TFTs of metal source and drain using blue-laser-diode annealing (BLDA)","subitem_1551255648112":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Sugihara, Kouya","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Shimoda, Kiyoharu","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Okada, Tatsuya","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Noguchib, Takashi","creatorNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_1522299639480":"open access","subitem_1600958577026":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186499011":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_1522650717957":"en","subitem_1522651041219":"Creative Commons Attribution 4.0"},{"subitem_1522650717957":"en","subitem_1522650727486":"http://creativecommons.org/licenses/by/4.0/","subitem_1522651041219":"http://creativecommons.org/licenses/by/4.0/"}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"AMD"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"flexible display"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"material and components"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"Blue-laser-diode annealing (BLDA) in the continuous wave mode was performed for sputtered silicon (Si) films. Polycrystalline silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate. For the source and drain formation, titanium (Ti) was evaporated to make the metal directly contact the channel Si film without adopting n+ doping. The improvement of the drain current was confirmed after hydrogen annealing at 400°C, and the typical poly-Si TFT characteristic with 50 cm2/Vs deduced effective carrier mobility was successfully observed. As the low-cost TFT fabrication without ion implantation becomes feasible, the low-temperature fabrication of poly-Si TFTs using BLDA is expected.","subitem_description_type":"Other"},{"subitem_description":"論文","subitem_description_type":"Other"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_1522300295150":"en","subitem_1522300316516":"Taylor & Francis"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_1551255818386":"eng"}]},"item_1617186783814":{"attribute_name":"Identifier","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/20.500.12000/47327"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_1522646500366":"ISSN","subitem_1522646572813":"1598-0316"},{"subitem_1522646500366":"ISSN","subitem_1522646572813":"2158-1606"}]},"item_1617186941041":{"attribute_name":"Source Title","attribute_value_mlt":[{"subitem_1522650068558":"en","subitem_1522650091861":"Journal of Information Display"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2017","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageEnd":"176","bibliographicPageStart":"173","bibliographicVolumeNumber":"18"}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_1522305645492":"VoR","subitem_1600292170262":"http://purl.org/coar/version/c_970fb48d4fbd8a85"}]},"item_1617353299429":{"attribute_name":"Relation","attribute_value_mlt":[{"subitem_1522306287251":{"subitem_1522306382014":"DOI","subitem_1522306436033":"https://doi.org/10.1080/15980316.2017.1372315"}},{"subitem_1522306287251":{"subitem_1522306382014":"DOI","subitem_1522306436033":"https://doi.org/10.1080/15980316.2017.1372315"}}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","filename":"Low temperature poly Si TFTs of metal source and drain using blue laser diode annealing BLDA.pdf","mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://u-ryukyu.repo.nii.ac.jp/record/2011254/files/Low temperature poly Si TFTs of metal source and drain using blue laser diode annealing BLDA.pdf"},"version_id":"e8c4593e-8430-44c4-8f92-249aa20166c9"}]},"item_title":"Low-temperature poly-Si TFTs of metal source and drain using blue-laser-diode annealing (BLDA)","item_type_id":"15","owner":"1","path":["1642838338003","1642838406845"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-26"},"publish_date":"2020-11-26","publish_status":"0","recid":"2011254","relation_version_is_last":true,"title":["Low-temperature poly-Si TFTs of metal source and drain using blue-laser-diode annealing (BLDA)"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-08-03T05:29:22.630617+00:00"}