@article{oai:u-ryukyu.repo.nii.ac.jp:02011255,
 author = {Noguchi, Takashi and Okada, Tatsuya},
 issue = {4},
 journal = {Journal of Information Display},
 month = {},
 note = {Amorphous SiO_2 and amorphous Si films were deposited on glass using radio frequency (RF) sputtering, and were subsequently poly-crystallized using blue-laser diode annealing (BLDA) scanned by a CW beam. Ne, which has a smaller atomic radius than Ar, was used for the sputtering of the Si film. For the gate insulator, a small amount of O_2 gas diluted with Ar was flown during the sputtering to optimize the SiO_2 film with a low leakage current. A simple TFT structure with a metal source and drain (S/D) was adopted to realize a low-temperature process with a low fabrication cost. Furthermore, to confirm the effectiveness of the sputtered gate oxide, a poly-Si TFT adopting a Si film deposited using plasma-enhanced chemical vapor deposition (PE CVD) for the channel was fabricated and was compared with the TFT with a sputtered Si film for the channel. Reasonable V_g-I_d characteristics were obtainedfor both poly-Si TFTs. The TFT structure with a metal S/Dformed through a low-temperature sputtering-based process is expected to be applied to Si TFTs on an arbitrary flexible panel., 論文},
 pages = {159--164},
 title = {Low-temperature poly Si TFTs via BLDA for a Ne-sputtered Si film using sputtered gate SiO2},
 volume = {19},
 year = {2018}
}