{"created":"2022-02-01T06:39:30.226369+00:00","id":2011255,"links":{},"metadata":{"_buckets":{"deposit":"fe6d38b2-29b5-4728-9b03-7ee06a72cd12"},"_deposit":{"id":"2011255","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"2011255"},"status":"published"},"_oai":{"id":"oai:u-ryukyu.repo.nii.ac.jp:02011255","sets":["1642838163960:1642838338003","1642838403551:1642838406845"]},"author_link":[],"item_1617186331708":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_1551255647225":"Low-temperature poly Si TFTs via BLDA for a Ne-sputtered Si film using sputtered gate SiO2","subitem_1551255648112":"en"}]},"item_1617186419668":{"attribute_name":"Creator","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Noguchi, Takashi","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Okada, Tatsuya","creatorNameLang":"en"}]}]},"item_1617186476635":{"attribute_name":"Access Rights","attribute_value_mlt":[{"subitem_1522299639480":"open access","subitem_1600958577026":"http://purl.org/coar/access_right/c_abf2"}]},"item_1617186499011":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_1522650717957":"en","subitem_1522651041219":"Creative Commons Attribution 4.0"},{"subitem_1522650717957":"en","subitem_1522650727486":"http://creativecommons.org/licenses/by/4.0/","subitem_1522651041219":"http://creativecommons.org/licenses/by/4.0/"}]},"item_1617186609386":{"attribute_name":"Subject","attribute_value_mlt":[{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"TFT"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"poly Si"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"sputtering"},{"subitem_1522299896455":"en","subitem_1522300014469":"Other","subitem_1523261968819":"gate oxide"}]},"item_1617186626617":{"attribute_name":"Description","attribute_value_mlt":[{"subitem_description":"Amorphous SiO_2 and amorphous Si films were deposited on glass using radio frequency (RF) sputtering, and were subsequently poly-crystallized using blue-laser diode annealing (BLDA) scanned by a CW beam. Ne, which has a smaller atomic radius than Ar, was used for the sputtering of the Si film. For the gate insulator, a small amount of O_2 gas diluted with Ar was flown during the sputtering to optimize the SiO_2 film with a low leakage current. A simple TFT structure with a metal source and drain (S/D) was adopted to realize a low-temperature process with a low fabrication cost. Furthermore, to confirm the effectiveness of the sputtered gate oxide, a poly-Si TFT adopting a Si film deposited using plasma-enhanced chemical vapor deposition (PE CVD) for the channel was fabricated and was compared with the TFT with a sputtered Si film for the channel. Reasonable V_g-I_d characteristics were obtainedfor both poly-Si TFTs. The TFT structure with a metal S/Dformed through a low-temperature sputtering-based process is expected to be applied to Si TFTs on an arbitrary flexible panel.","subitem_description_type":"Other"},{"subitem_description":"論文","subitem_description_type":"Other"}]},"item_1617186643794":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_1522300295150":"en","subitem_1522300316516":"Taylor & Francis"}]},"item_1617186702042":{"attribute_name":"Language","attribute_value_mlt":[{"subitem_1551255818386":"eng"}]},"item_1617186783814":{"attribute_name":"Identifier","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/20.500.12000/47328"}]},"item_1617186920753":{"attribute_name":"Source Identifier","attribute_value_mlt":[{"subitem_1522646500366":"ISSN","subitem_1522646572813":"1598-0316"},{"subitem_1522646500366":"ISSN","subitem_1522646572813":"2158-1606"}]},"item_1617186941041":{"attribute_name":"Source Title","attribute_value_mlt":[{"subitem_1522650068558":"en","subitem_1522650091861":"Journal of Information Display"}]},"item_1617187056579":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageEnd":"164","bibliographicPageStart":"159","bibliographicVolumeNumber":"19"}]},"item_1617258105262":{"attribute_name":"Resource Type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"Version Type","attribute_value_mlt":[{"subitem_1522305645492":"VoR","subitem_1600292170262":"http://purl.org/coar/version/c_970fb48d4fbd8a85"}]},"item_1617353299429":{"attribute_name":"Relation","attribute_value_mlt":[{"subitem_1522306287251":{"subitem_1522306382014":"DOI","subitem_1522306436033":"https://doi.org/10.1080/15980316.2018.1506367"}},{"subitem_1522306287251":{"subitem_1522306382014":"DOI","subitem_1522306436033":"https://doi.org/10.1080/15980316.2018.1506367"}}]},"item_1617605131499":{"attribute_name":"File","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","filename":"Low temperature poly Si TFTs via BLDA for a Ne sputtered Si film using sputtered gate SiO2.pdf","mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://u-ryukyu.repo.nii.ac.jp/record/2011255/files/Low temperature poly Si TFTs via BLDA for a Ne sputtered Si film using sputtered gate SiO2.pdf"},"version_id":"736bf5e6-c2a8-42a6-8e4d-a4c3165ddd93"}]},"item_title":"Low-temperature poly Si TFTs via BLDA for a Ne-sputtered Si film using sputtered gate SiO2","item_type_id":"15","owner":"1","path":["1642838338003","1642838406845"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-11-26"},"publish_date":"2020-11-26","publish_status":"0","recid":"2011255","relation_version_is_last":true,"title":["Low-temperature poly Si TFTs via BLDA for a Ne-sputtered Si film using sputtered gate SiO2"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-08-03T05:29:24.639864+00:00"}