@article{oai:u-ryukyu.repo.nii.ac.jp:02011259,
 author = {Koswaththage, Charith Jayanada and Okada, Tatsuya and Noguchi, Takashi and Taniguchi, Shinichi and Yoshitome, Shokichi},
 issue = {11},
 journal = {AIP Advances},
 month = {Dec},
 note = {InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm^2/(Vs) was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520°C for 30 sec or more without adopting epitaxial growth on glass., 論文},
 title = {Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate},
 volume = {6},
 year = {2016}
}