@article{oai:u-ryukyu.repo.nii.ac.jp:02011260,
 author = {Koswaththage, C.J. and Higashizako, T. and Okada, T. and Sadoh, T. and Furuta, M. and Bae, B.S. and Noguchi, T.},
 issue = {4},
 journal = {AIP Advances},
 month = {Apr},
 note = {InSb thin film was deposited on glass by r.f. sputtering using the InSb (atomic ratio of 1:1) target. The film was capped by SiO_2 film to prevent the effusion of Sb of low melting point. After that, blue laser beam at 445 nm of controlled power density was irradiated using CW scanning mode. The film was crystalized successfully with keeping the ratio of In and Sb as (1:1). High electron Hall mobility of 1,050 cm^2 /(Vs) was obtained without degrading under glass. New device applications such as magnetic or infrared sensor system with poly Si TFTs are expected not only on glass but also on flexible panel such as on plastic sheet., 論文},
 pages = {045009-1--045009-5},
 title = {High mobility sputtered InSb film by blue laser diode annealing},
 volume = {9},
 year = {2019}
}