{"_buckets": {"deposit": "4e15c974-b17d-4088-9ca0-53fa106ea6ee"}, "_deposit": {"id": "2004880", "owners": [1], "pid": {"revision_id": 0, "type": "depid", "value": "2004880"}, "status": "published"}, "_oai": {"id": "oai:u-ryukyu.repo.nii.ac.jp:02004880", "sets": ["1642837861518", "1642838406845"]}, "author_link": [], "item_1617186331708": {"attribute_name": "Title", "attribute_value_mlt": [{"subitem_1551255647225": "Si-doped GaAs\u5358\u7d50\u6676\u306e\u8ee2\u4f4d\u306e\u4e0a\u6607\u3068\u4e8c\u6b21\u5143\u6b20\u9665 \uff0dX\u7dda\u30c8\u30dd\u30b0\u30e9\u30d5\u30a3\u30fc\u306b\u3088\u308b\u89b3\u6e2c\uff0d", "subitem_1551255648112": "ja"}, {"subitem_1551255647225": "Observation of Dislocation Climbing with Two-dimensional Defects in Si-doped GaAs Crystal by X-ray Topography", "subitem_1551255648112": "en"}]}, "item_1617186419668": {"attribute_name": "Creator", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "\u524d\u6ff1, \u525b\u5ee3", "creatorNameLang": "ja"}]}, {"creatorNames": [{"creatorName": "\u5b89\u51a8\u7956, \u5fe0\u4fe1", "creatorNameLang": "ja"}]}, {"creatorNames": [{"creatorName": "Maehama, Takehiro", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Afuso, Chushin", "creatorNameLang": "en"}]}]}, "item_1617186476635": {"attribute_name": "Access Rights", "attribute_value_mlt": [{"subitem_1522299639480": "open access", "subitem_1600958577026": "http://purl.org/coar/access_right/c_abf2"}]}, "item_1617186609386": {"attribute_name": "Subject", "attribute_value_mlt": [{"subitem_1522299896455": "en", "subitem_1522300014469": "Other", "subitem_1523261968819": "Gallium arsenide"}, {"subitem_1522299896455": "en", "subitem_1522300014469": "Other", "subitem_1523261968819": "Dislocation"}, {"subitem_1522299896455": "en", "subitem_1522300014469": "Other", "subitem_1523261968819": "X-ray diffraction topography"}]}, "item_1617186626617": {"attribute_name": "Description", "attribute_value_mlt": [{"subitem_description": "A formation mechanism of two-dimensional defects which are produced in a Si-doped GaAs crystal during heat-treatment has been studied by X-ray diffraction topography. The Si-doped GaAs crystal was heat-treated for 72 hours at 1000\u2103 under 600 Torr arsenic pressure. X-ray diffraction topographs of the crystal were taken before and after heat-treatment. Then the surface of the crystal was etched by RC-1 etchant for revealing figures of defects. From these topographs we find that dislocations in the crystal climb to absorb some kind of point defects during heat-treatment. From etch figures we also find that two-dimensional defects which are never observed in the X-ray diffraction topograph are formed over tracts of dislocations climbing.", "subitem_description_type": "Other"}, {"subitem_description": "\u7d00\u8981\u8ad6\u6587", "subitem_description_type": "Other"}]}, "item_1617186643794": {"attribute_name": "Publisher", "attribute_value_mlt": [{"subitem_1522300295150": "ja", "subitem_1522300316516": "\u7409\u7403\u5927\u5b66\u5de5\u5b66\u90e8"}]}, "item_1617186702042": {"attribute_name": "Language", "attribute_value_mlt": [{"subitem_1551255818386": "jpn"}]}, "item_1617186783814": {"attribute_name": "Identifier", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/20.500.12000/12488"}]}, "item_1617186920753": {"attribute_name": "Source Identifier", "attribute_value_mlt": [{"subitem_1522646500366": "ISSN", "subitem_1522646572813": "0389-102X"}, {"subitem_1522646500366": "NCID", "subitem_1522646572813": "AN0025048X"}]}, "item_1617186941041": {"attribute_name": "Source Title", "attribute_value_mlt": [{"subitem_1522650068558": "ja", "subitem_1522650091861": "\u7409\u7403\u5927\u5b66\u5de5\u5b66\u90e8\u7d00\u8981"}]}, "item_1617187056579": {"attribute_name": "Bibliographic Information", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "1986-03", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "31", "bibliographicPageEnd": "60", "bibliographicPageStart": "51"}]}, "item_1617258105262": {"attribute_name": "Resource Type", "attribute_value_mlt": [{"resourcetype": "departmental bulletin paper", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_1617265215918": {"attribute_name": "Version Type", "attribute_value_mlt": [{"subitem_1522305645492": "VoR", "subitem_1600292170262": "http://purl.org/coar/version/c_970fb48d4fbd8a85"}]}, "item_1617605131499": {"attribute_name": "File", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_access", "download_preview_message": "", "file_order": 0, "filename": "No31p051.pdf", "future_date_message": "", "is_thumbnail": false, "mimetype": "", "size": 0, "url": {"objectType": "fulltext", "url": "https://u-ryukyu.repo.nii.ac.jp/record/2004880/files/No31p051.pdf"}, "version_id": "d647b08f-efdd-4fc9-990c-176efc5b2347"}]}, "item_title": "Si-doped GaAs\u5358\u7d50\u6676\u306e\u8ee2\u4f4d\u306e\u4e0a\u6607\u3068\u4e8c\u6b21\u5143\u6b20\u9665 \uff0dX\u7dda\u30c8\u30dd\u30b0\u30e9\u30d5\u30a3\u30fc\u306b\u3088\u308b\u89b3\u6e2c\uff0d", "item_type_id": "15", "owner": "1", "path": ["1642837861518", "1642838406845"], "permalink_uri": "http://hdl.handle.net/20.500.12000/12488", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2009-09-15"}, "publish_date": "2009-09-15", "publish_status": "0", "recid": "2004880", "relation": {}, "relation_version_is_last": true, "title": ["Si-doped GaAs\u5358\u7d50\u6676\u306e\u8ee2\u4f4d\u306e\u4e0a\u6607\u3068\u4e8c\u6b21\u5143\u6b20\u9665 \uff0dX\u7dda\u30c8\u30dd\u30b0\u30e9\u30d5\u30a3\u30fc\u306b\u3088\u308b\u89b3\u6e2c\uff0d"], "weko_shared_id": -1}