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  1. 紀要論文
  2. 琉球大学工学部紀要
  3. 28号
  1. 部局別インデックス
  2. 工学部

Si-doped GaAs単結晶の転位の上昇と二次元欠陥 -エッチング法による観測-

http://hdl.handle.net/20.500.12000/12489
http://hdl.handle.net/20.500.12000/12489
8fefe69e-5f7d-4f48-bdbb-077696fe89b3
名前 / ファイル ライセンス アクション
No28p047.pdf No28p047.pdf
Item type デフォルトアイテムタイプ(フル)(1)
公開日 2009-09-15
タイトル
タイトル Si-doped GaAs単結晶の転位の上昇と二次元欠陥 -エッチング法による観測-
言語 ja
作成者 前濱, 剛廣

× 前濱, 剛廣

ja 前濱, 剛廣

Maehama, Takehiro

× Maehama, Takehiro

en Maehama, Takehiro

アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
主題
言語 en
主題Scheme Other
主題 Defect
言語 en
主題Scheme Other
主題 Dislocation
言語 en
主題Scheme Other
主題 Etch figure
言語 en
主題Scheme Other
主題 Gallium arrsenide
内容記述
内容記述タイプ Other
内容記述 Si-doped and non-doped GaAs crystals are heat-treated for 72 hours at 1000℃ under 600 Torr arrsenic pressure. Arrow-shaped etch figures, which have never been found on as-grown Si-doped GaAs crystals, are formed on As (1^^-1^^-1^^-) surface of heat-treated Si-doped GaAs crystal, but these etch figures did not appear on non-doped case. The arrow-shaped etch figure corresponds to a two-dimensional defect which is formed by dislocation clibming. The dislocation clibming mechanism and the formation mechanism of the two-dimensional defect are discussed precisely and a model of the formation is proposed. which concerns with Si-impurities and As interstitials.
内容記述タイプ Other
内容記述 紀要論文
出版者
言語 ja
出版者 琉球大学工学部
言語
言語 jpn
資源タイプ
資源タイプ departmental bulletin paper
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
識別子
識別子 http://hdl.handle.net/20.500.12000/12489
識別子タイプ HDL
収録物識別子
収録物識別子タイプ ISSN
収録物識別子 0389-102X
収録物識別子タイプ NCID
収録物識別子 AN0025048X
収録物名
言語 ja
収録物名 琉球大学工学部紀要
書誌情報
号 28, p. 47-53
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