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  1. 学術雑誌論文
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  1. 部局別インデックス
  2. 工学部

Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

http://hdl.handle.net/20.500.12000/47345
http://hdl.handle.net/20.500.12000/47345
dfd3bf0a-371b-4f58-8e66-7f21daea6839
名前 / ファイル ライセンス アクション
1.4967287.pdf 1.4967287.pdf
Item type デフォルトアイテムタイプ(フル)(1)
公開日 2020-11-27
タイトル
タイトル Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate
言語 en
作成者 Koswaththage, Charith Jayanada

× Koswaththage, Charith Jayanada

en Koswaththage, Charith Jayanada

Okada, Tatsuya

× Okada, Tatsuya

en Okada, Tatsuya

Noguchi, Takashi

× Noguchi, Takashi

en Noguchi, Takashi

Taniguchi, Shinichi

× Taniguchi, Shinichi

en Taniguchi, Shinichi

Yoshitome, Shokichi

× Yoshitome, Shokichi

en Yoshitome, Shokichi

アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利情報
言語 en
権利情報 Creative Commons Attribution 4.0
言語 en
権利情報Resource http://creativecommons.org/licenses/by/4.0/
権利情報 http://creativecommons.org/licenses/by/4.0/
内容記述
内容記述タイプ Other
内容記述 InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm^2/(Vs) was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520°C for 30 sec or more without adopting epitaxial growth on glass.
内容記述タイプ Other
内容記述 論文
出版者
言語 en
出版者 American Institute of Physics
言語
言語 eng
資源タイプ
資源タイプ journal article
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
識別子
識別子 http://hdl.handle.net/20.500.12000/47345
識別子タイプ HDL
関連情報
関連識別子
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.4967287
関連識別子
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.4967287
収録物識別子
収録物識別子タイプ ISSN
収録物識別子 2158-3226
収録物名
言語 en
収録物名 AIP Advances
書誌情報
巻 6, 号 11, 発行日 2016-12-01
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