{"_buckets": {"deposit": "6466e59f-f7a3-44ae-a250-1a01239eabd9"}, "_deposit": {"id": "2011259", "owners": [1], "pid": {"revision_id": 0, "type": "depid", "value": "2011259"}, "status": "published"}, "_oai": {"id": "oai:u-ryukyu.repo.nii.ac.jp:02011259", "sets": ["1642838338003", "1642838406845"]}, "author_link": [], "item_1617186331708": {"attribute_name": "Title", "attribute_value_mlt": [{"subitem_1551255647225": "Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate", "subitem_1551255648112": "en"}]}, "item_1617186419668": {"attribute_name": "Creator", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Koswaththage, Charith Jayanada", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Okada, Tatsuya", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Noguchi, Takashi", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Taniguchi, Shinichi", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Yoshitome, Shokichi", "creatorNameLang": "en"}]}]}, "item_1617186476635": {"attribute_name": "Access Rights", "attribute_value_mlt": [{"subitem_1522299639480": "open access", "subitem_1600958577026": "http://purl.org/coar/access_right/c_abf2"}]}, "item_1617186499011": {"attribute_name": "Rights", "attribute_value_mlt": [{"subitem_1522650717957": "en", "subitem_1522651041219": "Creative Commons Attribution 4.0"}, {"subitem_1522650717957": "en", "subitem_1522650727486": "http://creativecommons.org/licenses/by/4.0/", "subitem_1522651041219": "http://creativecommons.org/licenses/by/4.0/"}]}, "item_1617186626617": {"attribute_name": "Description", "attribute_value_mlt": [{"subitem_description": "InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm^2/(Vs) was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520\u00b0C for 30 sec or more without adopting epitaxial growth on glass.", "subitem_description_type": "Other"}, {"subitem_description": "\u8ad6\u6587", "subitem_description_type": "Other"}]}, "item_1617186643794": {"attribute_name": "Publisher", "attribute_value_mlt": [{"subitem_1522300295150": "en", "subitem_1522300316516": "American Institute of Physics"}]}, "item_1617186702042": {"attribute_name": "Language", "attribute_value_mlt": [{"subitem_1551255818386": "eng"}]}, "item_1617186783814": {"attribute_name": "Identifier", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/20.500.12000/47345"}]}, "item_1617186920753": {"attribute_name": "Source Identifier", "attribute_value_mlt": [{"subitem_1522646500366": "ISSN", "subitem_1522646572813": "2158-3226"}]}, "item_1617186941041": {"attribute_name": "Source Title", "attribute_value_mlt": [{"subitem_1522650068558": "en", "subitem_1522650091861": "AIP Advances"}]}, "item_1617187056579": {"attribute_name": "Bibliographic Information", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2016-12-01", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "11", "bibliographicVolumeNumber": "6"}]}, "item_1617258105262": {"attribute_name": "Resource Type", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_1617265215918": {"attribute_name": "Version Type", "attribute_value_mlt": [{"subitem_1522305645492": "VoR", "subitem_1600292170262": "http://purl.org/coar/version/c_970fb48d4fbd8a85"}]}, "item_1617353299429": {"attribute_name": "Relation", "attribute_value_mlt": [{"subitem_1522306287251": {"subitem_1522306382014": "DOI", "subitem_1522306436033": "https://doi.org/10.1063/1.4967287"}}, {"subitem_1522306287251": {"subitem_1522306382014": "DOI", "subitem_1522306436033": "https://doi.org/10.1063/1.4967287"}}]}, "item_1617605131499": {"attribute_name": "File", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_access", "download_preview_message": "", "file_order": 0, "filename": "1.4967287.pdf", "future_date_message": "", "is_thumbnail": false, "mimetype": "", "size": 0, "url": {"objectType": "fulltext", "url": "https://u-ryukyu.repo.nii.ac.jp/record/2011259/files/1.4967287.pdf"}, "version_id": "500c2e74-4895-45c7-b2bf-9b8bd3a1f508"}]}, "item_title": "Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate", "item_type_id": "15", "owner": "1", "path": ["1642838338003", "1642838406845"], "permalink_uri": "http://hdl.handle.net/20.500.12000/47345", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2020-11-27"}, "publish_date": "2020-11-27", "publish_status": "0", "recid": "2011259", "relation": {}, "relation_version_is_last": true, "title": ["Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate"], "weko_shared_id": -1}