WEKO3
アイテム
{"_buckets": {"deposit": "fe6d38b2-29b5-4728-9b03-7ee06a72cd12"}, "_deposit": {"id": "2011255", "owners": [1], "pid": {"revision_id": 0, "type": "depid", "value": "2011255"}, "status": "published"}, "_oai": {"id": "oai:u-ryukyu.repo.nii.ac.jp:02011255", "sets": ["1642838338003", "1642838406845"]}, "author_link": [], "item_1617186331708": {"attribute_name": "Title", "attribute_value_mlt": [{"subitem_1551255647225": "Low-temperature poly Si TFTs via BLDA for a Ne-sputtered Si film using sputtered gate SiO2", "subitem_1551255648112": "en"}]}, "item_1617186419668": {"attribute_name": "Creator", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Noguchi, Takashi", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Okada, Tatsuya", "creatorNameLang": "en"}]}]}, "item_1617186476635": {"attribute_name": "Access Rights", "attribute_value_mlt": [{"subitem_1522299639480": "open access", "subitem_1600958577026": "http://purl.org/coar/access_right/c_abf2"}]}, "item_1617186499011": {"attribute_name": "Rights", "attribute_value_mlt": [{"subitem_1522650717957": "en", "subitem_1522651041219": "Creative Commons Attribution 4.0"}, {"subitem_1522650717957": "en", "subitem_1522650727486": "http://creativecommons.org/licenses/by/4.0/", "subitem_1522651041219": "http://creativecommons.org/licenses/by/4.0/"}]}, "item_1617186609386": {"attribute_name": "Subject", "attribute_value_mlt": [{"subitem_1522299896455": "en", "subitem_1522300014469": "Other", "subitem_1523261968819": "TFT"}, {"subitem_1522299896455": "en", "subitem_1522300014469": "Other", "subitem_1523261968819": "poly Si"}, {"subitem_1522299896455": "en", "subitem_1522300014469": "Other", "subitem_1523261968819": "sputtering"}, {"subitem_1522299896455": "en", "subitem_1522300014469": "Other", "subitem_1523261968819": "gate oxide"}]}, "item_1617186626617": {"attribute_name": "Description", "attribute_value_mlt": [{"subitem_description": "Amorphous SiO_2 and amorphous Si films were deposited on glass using radio frequency (RF) sputtering, and were subsequently poly-crystallized using blue-laser diode annealing (BLDA) scanned by a CW beam. Ne, which has a smaller atomic radius than Ar, was used for the sputtering of the Si film. For the gate insulator, a small amount of O_2 gas diluted with Ar was flown during the sputtering to optimize the SiO_2 film with a low leakage current. A simple TFT structure with a metal source and drain (S/D) was adopted to realize a low-temperature process with a low fabrication cost. Furthermore, to confirm the effectiveness of the sputtered gate oxide, a poly-Si TFT adopting a Si film deposited using plasma-enhanced chemical vapor deposition (PE CVD) for the channel was fabricated and was compared with the TFT with a sputtered Si film for the channel. Reasonable V_g-I_d characteristics were obtainedfor both poly-Si TFTs. The TFT structure with a metal S/Dformed through a low-temperature sputtering-based process is expected to be applied to Si TFTs on an arbitrary flexible panel.", "subitem_description_type": "Other"}, {"subitem_description": "\u8ad6\u6587", "subitem_description_type": "Other"}]}, "item_1617186643794": {"attribute_name": "Publisher", "attribute_value_mlt": [{"subitem_1522300295150": "en", "subitem_1522300316516": "Taylor \u0026 Francis"}]}, "item_1617186702042": {"attribute_name": "Language", "attribute_value_mlt": [{"subitem_1551255818386": "eng"}]}, "item_1617186783814": {"attribute_name": "Identifier", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/20.500.12000/47328"}]}, "item_1617186920753": {"attribute_name": "Source Identifier", "attribute_value_mlt": [{"subitem_1522646500366": "ISSN", "subitem_1522646572813": "1598-0316"}, {"subitem_1522646500366": "ISSN", "subitem_1522646572813": "2158-1606"}]}, "item_1617186941041": {"attribute_name": "Source Title", "attribute_value_mlt": [{"subitem_1522650068558": "en", "subitem_1522650091861": "Journal of Information Display"}]}, "item_1617187056579": {"attribute_name": "Bibliographic Information", "attribute_value_mlt": [{"bibliographicIssueNumber": "4", "bibliographicPageEnd": "164", "bibliographicPageStart": "159", "bibliographicVolumeNumber": "19"}]}, "item_1617258105262": {"attribute_name": "Resource Type", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_1617265215918": {"attribute_name": "Version Type", "attribute_value_mlt": [{"subitem_1522305645492": "VoR", "subitem_1600292170262": "http://purl.org/coar/version/c_970fb48d4fbd8a85"}]}, "item_1617353299429": {"attribute_name": "Relation", "attribute_value_mlt": [{"subitem_1522306287251": {"subitem_1522306382014": "DOI", "subitem_1522306436033": "https://doi.org/10.1080/15980316.2018.1506367"}}, {"subitem_1522306287251": {"subitem_1522306382014": "DOI", "subitem_1522306436033": "https://doi.org/10.1080/15980316.2018.1506367"}}]}, "item_1617605131499": {"attribute_name": "File", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_access", "download_preview_message": "", "file_order": 0, "filename": "Low temperature poly Si TFTs via BLDA for a Ne sputtered Si film using sputtered gate SiO2.pdf", "future_date_message": "", "is_thumbnail": false, "mimetype": "", "size": 0, "url": {"objectType": "fulltext", "url": "https://u-ryukyu.repo.nii.ac.jp/record/2011255/files/Low temperature poly Si TFTs via BLDA for a Ne sputtered Si film using sputtered gate SiO2.pdf"}, "version_id": "736bf5e6-c2a8-42a6-8e4d-a4c3165ddd93"}]}, "item_title": "Low-temperature poly Si TFTs via BLDA for a Ne-sputtered Si film using sputtered gate SiO2", "item_type_id": "15", "owner": "1", "path": ["1642838338003", "1642838406845"], "permalink_uri": "http://hdl.handle.net/20.500.12000/47328", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2020-11-26"}, "publish_date": "2020-11-26", "publish_status": "0", "recid": "2011255", "relation": {}, "relation_version_is_last": true, "title": ["Low-temperature poly Si TFTs via BLDA for a Ne-sputtered Si film using sputtered gate SiO2"], "weko_shared_id": -1}
Low-temperature poly Si TFTs via BLDA for a Ne-sputtered Si film using sputtered gate SiO2
http://hdl.handle.net/20.500.12000/47328
http://hdl.handle.net/20.500.12000/4732894279a9b-5057-4d9c-b750-dc9de73dd52b
| 名前 / ファイル | ライセンス | アクション | |
|---|---|---|---|
Low temperature poly Si TFTs via BLDA for a Ne sputtered Si film using sputtered gate SiO2.pdf
|
|
| Item type | デフォルトアイテムタイプ（フル）(1) | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2020-11-26 | |||||||||
| タイトル | ||||||||||
| タイトル | Low-temperature poly Si TFTs via BLDA for a Ne-sputtered Si film using sputtered gate SiO2 | |||||||||
| 言語 | en | |||||||||
| 作成者 |
Noguchi, Takashi
× Noguchi, Takashi
× Okada, Tatsuya
|
|||||||||
| アクセス権 | ||||||||||
| アクセス権 | open access | |||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||
| 権利情報 | ||||||||||
| 言語 | en | |||||||||
| 権利情報 | Creative Commons Attribution 4.0 | |||||||||
| 言語 | en | |||||||||
| 権利情報Resource | http://creativecommons.org/licenses/by/4.0/ | |||||||||
| 権利情報 | http://creativecommons.org/licenses/by/4.0/ | |||||||||
| 主題 | ||||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | TFT | |||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | poly Si | |||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | sputtering | |||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | gate oxide | |||||||||
| 内容記述 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | Amorphous SiO_2 and amorphous Si films were deposited on glass using radio frequency (RF) sputtering, and were subsequently poly-crystallized using blue-laser diode annealing (BLDA) scanned by a CW beam. Ne, which has a smaller atomic radius than Ar, was used for the sputtering of the Si film. For the gate insulator, a small amount of O_2 gas diluted with Ar was flown during the sputtering to optimize the SiO_2 film with a low leakage current. A simple TFT structure with a metal source and drain (S/D) was adopted to realize a low-temperature process with a low fabrication cost. Furthermore, to confirm the effectiveness of the sputtered gate oxide, a poly-Si TFT adopting a Si film deposited using plasma-enhanced chemical vapor deposition (PE CVD) for the channel was fabricated and was compared with the TFT with a sputtered Si film for the channel. Reasonable V_g-I_d characteristics were obtainedfor both poly-Si TFTs. The TFT structure with a metal S/Dformed through a low-temperature sputtering-based process is expected to be applied to Si TFTs on an arbitrary flexible panel. | |||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | 論文 | |||||||||
| 出版者 | ||||||||||
| 言語 | en | |||||||||
| 出版者 | Taylor & Francis | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ | journal article | |||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 出版タイプ | ||||||||||
| 出版タイプ | VoR | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||
| 識別子 | ||||||||||
| 識別子 | http://hdl.handle.net/20.500.12000/47328 | |||||||||
| 識別子タイプ | HDL | |||||||||
| 関連情報 | ||||||||||
| 関連識別子 | ||||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | https://doi.org/10.1080/15980316.2018.1506367 | |||||||||
| 関連識別子 | ||||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | https://doi.org/10.1080/15980316.2018.1506367 | |||||||||
| 収録物識別子 | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 1598-0316 | |||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 2158-1606 | |||||||||
| 収録物名 | ||||||||||
| 言語 | en | |||||||||
| 収録物名 | Journal of Information Display | |||||||||
| 書誌情報 |
巻 19, 号 4, p. 159-164 |
|||||||||
