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  1. 学術雑誌論文
  2. その他
  1. 部局別インデックス
  2. 工学部

Low-temperature poly Si TFTs via BLDA for a Ne-sputtered Si film using sputtered gate SiO2

http://hdl.handle.net/20.500.12000/47328
http://hdl.handle.net/20.500.12000/47328
94279a9b-5057-4d9c-b750-dc9de73dd52b
名前 / ファイル ライセンス アクション
Low Low temperature poly Si TFTs via BLDA for a Ne sputtered Si film using sputtered gate SiO2.pdf
Item type デフォルトアイテムタイプ(フル)(1)
公開日 2020-11-26
タイトル
タイトル Low-temperature poly Si TFTs via BLDA for a Ne-sputtered Si film using sputtered gate SiO2
言語 en
作成者 Noguchi, Takashi

× Noguchi, Takashi

en Noguchi, Takashi

Okada, Tatsuya

× Okada, Tatsuya

en Okada, Tatsuya

アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利情報
言語 en
権利情報 Creative Commons Attribution 4.0
言語 en
権利情報Resource http://creativecommons.org/licenses/by/4.0/
権利情報 http://creativecommons.org/licenses/by/4.0/
主題
言語 en
主題Scheme Other
主題 TFT
言語 en
主題Scheme Other
主題 poly Si
言語 en
主題Scheme Other
主題 sputtering
言語 en
主題Scheme Other
主題 gate oxide
内容記述
内容記述タイプ Other
内容記述 Amorphous SiO_2 and amorphous Si films were deposited on glass using radio frequency (RF) sputtering, and were subsequently poly-crystallized using blue-laser diode annealing (BLDA) scanned by a CW beam. Ne, which has a smaller atomic radius than Ar, was used for the sputtering of the Si film. For the gate insulator, a small amount of O_2 gas diluted with Ar was flown during the sputtering to optimize the SiO_2 film with a low leakage current. A simple TFT structure with a metal source and drain (S/D) was adopted to realize a low-temperature process with a low fabrication cost. Furthermore, to confirm the effectiveness of the sputtered gate oxide, a poly-Si TFT adopting a Si film deposited using plasma-enhanced chemical vapor deposition (PE CVD) for the channel was fabricated and was compared with the TFT with a sputtered Si film for the channel. Reasonable V_g-I_d characteristics were obtainedfor both poly-Si TFTs. The TFT structure with a metal S/Dformed through a low-temperature sputtering-based process is expected to be applied to Si TFTs on an arbitrary flexible panel.
内容記述タイプ Other
内容記述 論文
出版者
言語 en
出版者 Taylor & Francis
言語
言語 eng
資源タイプ
資源タイプ journal article
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
識別子
識別子 http://hdl.handle.net/20.500.12000/47328
識別子タイプ HDL
関連情報
関連識別子
識別子タイプ DOI
関連識別子 https://doi.org/10.1080/15980316.2018.1506367
関連識別子
識別子タイプ DOI
関連識別子 https://doi.org/10.1080/15980316.2018.1506367
収録物識別子
収録物識別子タイプ ISSN
収録物識別子 1598-0316
収録物識別子タイプ ISSN
収録物識別子 2158-1606
収録物名
言語 en
収録物名 Journal of Information Display
書誌情報
巻 19, 号 4, p. 159-164
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