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Low-temperature poly Si TFTs via BLDA for a Ne-sputtered Si film using sputtered gate SiO2
http://hdl.handle.net/20.500.12000/47328
http://hdl.handle.net/20.500.12000/4732894279a9b-5057-4d9c-b750-dc9de73dd52b
| 名前 / ファイル | ライセンス | アクション | |
|---|---|---|---|
Low temperature poly Si TFTs via BLDA for a Ne sputtered Si film using sputtered gate SiO2.pdf
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| Item type | デフォルトアイテムタイプ（フル）(1) | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2020-11-26 | |||||||||
| タイトル | ||||||||||
| タイトル | Low-temperature poly Si TFTs via BLDA for a Ne-sputtered Si film using sputtered gate SiO2 | |||||||||
| 言語 | en | |||||||||
| 作成者 |
Noguchi, Takashi
× Noguchi, Takashi
× Okada, Tatsuya
|
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| アクセス権 | ||||||||||
| アクセス権 | open access | |||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||
| 権利情報 | ||||||||||
| 言語 | en | |||||||||
| 権利情報 | Creative Commons Attribution 4.0 | |||||||||
| 言語 | en | |||||||||
| 権利情報Resource | http://creativecommons.org/licenses/by/4.0/ | |||||||||
| 権利情報 | http://creativecommons.org/licenses/by/4.0/ | |||||||||
| 主題 | ||||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | TFT | |||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | poly Si | |||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | sputtering | |||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | gate oxide | |||||||||
| 内容記述 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | Amorphous SiO_2 and amorphous Si films were deposited on glass using radio frequency (RF) sputtering, and were subsequently poly-crystallized using blue-laser diode annealing (BLDA) scanned by a CW beam. Ne, which has a smaller atomic radius than Ar, was used for the sputtering of the Si film. For the gate insulator, a small amount of O_2 gas diluted with Ar was flown during the sputtering to optimize the SiO_2 film with a low leakage current. A simple TFT structure with a metal source and drain (S/D) was adopted to realize a low-temperature process with a low fabrication cost. Furthermore, to confirm the effectiveness of the sputtered gate oxide, a poly-Si TFT adopting a Si film deposited using plasma-enhanced chemical vapor deposition (PE CVD) for the channel was fabricated and was compared with the TFT with a sputtered Si film for the channel. Reasonable V_g-I_d characteristics were obtainedfor both poly-Si TFTs. The TFT structure with a metal S/Dformed through a low-temperature sputtering-based process is expected to be applied to Si TFTs on an arbitrary flexible panel. | |||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | 論文 | |||||||||
| 出版者 | ||||||||||
| 言語 | en | |||||||||
| 出版者 | Taylor & Francis | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ | journal article | |||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 出版タイプ | ||||||||||
| 出版タイプ | VoR | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||
| 識別子 | ||||||||||
| 識別子 | http://hdl.handle.net/20.500.12000/47328 | |||||||||
| 識別子タイプ | HDL | |||||||||
| 関連情報 | ||||||||||
| 関連識別子 | ||||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | https://doi.org/10.1080/15980316.2018.1506367 | |||||||||
| 関連識別子 | ||||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | https://doi.org/10.1080/15980316.2018.1506367 | |||||||||
| 収録物識別子 | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 1598-0316 | |||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 2158-1606 | |||||||||
| 収録物名 | ||||||||||
| 言語 | en | |||||||||
| 収録物名 | Journal of Information Display | |||||||||
| 書誌情報 |
巻 19, 号 4, p. 159-164, 発行日 2018 |
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